G6D-F4B/G3DZ-F4B
G6D-F4B/G3DZ-F4B
3
Characteristics
Item
G6D-F4B
e
Relay output
Contact resistance (see note 2)
100 m
Ω
max.
Must operate time (see note 3)
10 ms max.
Release time (see note 3)
10 ms max.
Insulation resistance
1,000 M
Ω
min. (at 500 VDC)
Dielectric strength
2,000 VAC, 50/60 Hz for 1 min between coil and contacts.
e ec
c s e g
750 VAC, 50/60 Hz for 1 min between contacts of same polarity
Impulse withstand voltage (between
coil and contacts)
4,000 V (1.2
50
µ
s)
Vibration resistance
Destruction:10 to 55 Hz, 1.5-mm double amplitude
Malfunction:10 to 55 Hz, 1.5-mm double amplitude
Shock resistance
Destruction:500 m/s
2
S oc
es s a ce
Malfunction:100 m/s
2
Life expectancy
Mechanical:20,000,000 operations min. (at 18,000 operations/hr)
e e pec a cy
Electrical:
100,000 operations min. (3 A at 250 VAC, resistive load)
100,000 operations min. (3 A at 30 VDC, resistive load) (at 1,800 operations /hr)
Ambient temperature
Operating: –25
°
C to 55
°
C (with no icing)
Storage:
–25
°
C to 55
°
C (with no icing)
Ambient humidity
Operating: 45% to 85%
Weight
Approx. 65 g
Note:
1. The above values are initial values.
2. Measurement condition: 1 A at 5 VDC
3. Ambient temperature condition: 23
°
C
Item
G3DZ-F4B
e
Power MOS FET relay output
Must operate time
10 ms max.
Release time
15 ms max.
Output ON-resistance
2.4
Ω
max.
Leakage current at OFF state
10
µ
A max. (at 125 VDC)
Insulation resistance
100 M
Ω
min. (at 500 VDC)
Dielectric strength
2,000 VAC, 50/60 Hz for 1 min between input and output terminals
Vibration resistance
10 to 55 Hz, 1.5-mm double amplitude
Shock resistance
500 m/s
2
Ambient temperature
Operating: –25
°
C to 55
°
C (with no icing)
Storage:
–25
°
C to 55
°
C (with no icing)
Ambient humidity
Operating: 45% to 85%
Weight
Approx. 65 g
