NXP Semiconductors BGM1012, Datasheet

Page: 7 / 13

2002 Sep 06 7
NXP Semiconductors Product specification
MMIC wideband amplifier BGM1012
handbook, halfpage
0 1000
f (MHz)
2000 4000
0
−
50
−
10
3000
−
20
−
30
−
40
MLD912
s12
2
(dB)
Fig.9 Isolation (

s
12

2
) as a function of frequency;
typical values.
I
S
= 14.6 mA; V
S
= 3 V; P
D
=

30 dBm; Z
O
= 50

handbook, halfpage
0
f (MHz)
(1)
(3)
25
20
15
10
1000 2000 4000 3000
MLD913
s21
2
(dB)
(2)
Fig.10 Insertion gain (

s
21

2
) as a function of
frequency; typical values.
P
D
=

30 dBm; Z
O
= 50

(1) I
S
= 18.7 mA; V
S
= 3.3 V.
(2) I
S
= 14.6 mA; V
S
= 3 V.
(3) I
S
= 10.6 mA; V
S
= 2.7 V.
handbook, halfpage
−
40
−
30
PD (dBm)
PL
(dBm)
−
20 0
20
10
−
10
−
20
0
−
10
MLD914
(1)
(2)
(3)
Fig.11 Load power as a function of drive power at
1 GHz; typical values.
f = 1 GHz; Z
O
= 50

(1) V
S
= 3.3 V.
(2) V
S
= 3 V.
(3) V
S
= 2.7 V.
handbook, halfpage
−
40
−
30
PD (dBm)
PL
(dBm)
−
20 0
(1)
(2) (3)
20
10
−
10
−
20
0
−
10
MLD915
Fig.12 Load power as a function of drive power at
2.2 GHz; typical values.
f = 2.2 GHz; Z
O
= 50

(1) V
S
= 3.3 V.
(2) V
S
= 3 V.
(3) V
S
= 2.7 V.