20
02
Se
p
0
6
9
NXP Semiconductors
Pr
odu
c
t s
pec
ifica
tio
n
MMIC wideband amplifier
B
GM1012
Scattering parameters
V
S
= 3 V; I
S
= 14.6 mA; P
D
=
30 dBm; Z
O
= 50
; T
amb
= 25
C.
f (MHz)
s
11
s
21
s
12
s
22
K-
FACTOR
MAGNITUDE
(ratio)
ANGLE
(deg)
MAGNITUDE
(ratio)
ANGLE
(deg)
MAGNITUDE
(ratio)
ANGLE
(deg)
MAGNITUDE
(ratio)
ANGLE
(deg)
100
0.25122
14.607
9.33681
12.018
0.032124
16.445
0.26458
64.156
1.6
200
0.27070
2.759
9.42458
5.676
0.028303
6.37
0.20645
64.153
1.8
400
0.27979
7.969
9.63627
8.447
0.026297
4.545
0.1543
52.558
1.9
600
0.28323
14.78
9.76543
19.02
0.024833
10.24
0.15203
39.347
1.9
800
0.28557
20.13
9.93782
27.93
0.023234
14.62
0.16867
27.926
2.0
1000
0.28673
24.14
10.03633
36.88
0.021523
17.42
0.19196
19.293
2.1
1200
0.28517
27.57
10.11638
46.47
0.019830
19.83
0.21421
12.703
2.2
1400
0.27902
29.93
10.26450
56.05
0.018230
21.14
0.23292
7.154
2.4
1600
0.26682
31.81
10.40572
65.76
0.016902
21.62
0.24605
2.582
2.5
1800
0.24746
33.12
10.44088
76.97
0.015759
22.32
0.25113
1.26
2.7
2000
0.21894
33.8
10.46224
88.33
0.014310
22.64
0.24367
4.817
3.0
2200
0.18164
32.67
10.45202
100.3
0.013012
23.13
0.22184
7.573
3.4
2400
0.14000
26.75
10.34342
112.6
0.011826
23.27
0.18787
8.489
3.9
2600
0.10418
10.16
9.87989
122.9
0.010171
23.23
0.13049
4.601
4.9
2800
0.09469
15.051
9.20393
129.5
0.008664
16.9
0.1294
9.578
6.2
3000
0.10595
33.415
8.68177
135.4
0.007541
9.957
0.1127
18.402
7.5
3200
0.11609
42.888
8.18809
142.2
0.006655
0.835
0.092234
23.406
9.0
3400
0.10827
50.017
7.93039
151.5
0.006042
12.444
0.059268
26.453
10.3
3600
0.09866
60.967
7.77538
162.2
0.006205
29.297
0.015829
38.211
10.3
3800
0.08693
80.355
7.33775
172.6
0.007039
40.351
0.028159
152.8
9.6
4000
0.10090
102.07
6.90878
177.1
0.008241
46.053
0.075298
133.1
8.7
