2002 Sep 06
4
NXP Semiconductors
Product specification
MMIC wideband amplifier
BGM1012
CHARACTERISTICS
V
S
= 3 V; I
S
= 14.6 mA; T
j
= 25
C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
S
supply current
11
14.6
19
mA
s
21
2
insertion power gain
f = 100 MHz
19
19.5
20
dB
f = 1 GHz
19
20.1
21
dB
f = 1.8 GHz
19
20.4
21
dB
f = 2.2 GHz
19
20.4
22
dB
f = 2.6 GHz
18
19.9
21
dB
f = 3 GHz
16
18.7
20
dB
R
L IN
return losses input
f = 1 GHz
9
11
dB
f = 2.2 GHz
13
15
dB
R
L OUT
return losses output
f = 1 GHz
11
14
dB
f = 2.2 GHz
10
13
dB
s
12
2
isolation
f = 1 GHz
30
33
dB
f = 2.2 GHz
35
38
dB
NF
noise figure
f = 1 GHz
4.8
5.1
dB
f = 2.2 GHz
4.9
5.3
dB
BW
bandwidth
at
s
21
2
3 dB below flat gain at 1 GHz 3.1
3.6
GHz
K
stability factor
f = 1 GHz
1.5
2.1
f = 2.2 GHz
3
3.4
P
L(sat)
saturated load power
f = 1 GHz
8
9.7
dBm
f = 2.2 GHz
3.5
5.6
dBm
P
L 1 dB
load power
at 1 dB gain compression; f = 1 GHz
4
6.0
dBm
at 1 dB gain compression; f = 2.2 GHz
1.5
3.4
dBm
IP3
(in)
input intercept point
f = 1 GHz
4
2
dBm
f = 2.2 GHz
9
7
dBm
IP3
(out)
output intercept point
f = 1 GHz
16
18
dBm
f = 2.2 GHz
11
13
dBm
