DS3232
Extremely Accurate I
2
C RTC with
Integrated Crystal and SRAM
_____________________________________________________________________
3
ELECTRICAL CHARACTERISTICS (continued)
(V
CC
= 2.3V to 5.5V, V
CC
= active supply (see Table 1), T
A
= -40°C to +85°C, unless otherwise noted.) (Typical values are at
V
CC
=
3.3V, V
BAT
= 3.0V
, and T
A
= +25°C, unless otherwise noted.) (Notes 2, 3)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Logic 0 Output,
INT
/SQW, SDA
V
OL
I
OL
= 3mA
0.4
V
Logic 0 Output,
RST
, 32kHz
V
OL
I
OL
= 1mA
0.4
V
Output Leakage Current 32kHz,
INT
/SQW, SDA
I
LO
Output high impedance
-1
0
+1
µA
Input Leakage SCL
I
LI
-1
+1
µA
RST
Pin I/O Leakage
I
OL
RST
high impedance (Note 6)
-200
+10
µA
TCXO
Output Frequency
f
OUT
V
CC
= 3.3V or V
BAT
= 3.3V
32.768
kHz
Duty Cycle
(Revision A3 Devices)
2.97V
≤
V
CC
< 3.63
31
69
%
0°C to +40°C
-2
+2
Frequency Stability vs.
Temperature
Δ
f/f
OUT
V
CC
= 3.3V or
V
BAT
= 3.3V
- 40° C to 0°C and
+ 40° C to + 85°C
-3.5
+3.5
ppm
Frequency Stability vs. Voltage
Δ
f/V
V
CC
= 3.3V or V
BAT
= 3.3V
1
ppm/V
-40°C
0.7
+25°C
0.1
+70°C
0.4
Trim Register Frequency
Sensitivity per LSB
Δ
f/LSB
Specified at:
+85°C
0.8
ppm
Temperature Accuracy
Temp
V
CC
= 3.3V or V
BAT
= 3.3V
-3
+3
°C
First year
±1.0
Crystal Aging
Δ
f/f
0
After reflow,
not production tested
0–10 years
±5.0
ppm
ELECTRICAL CHARACTERISTICS
(
V
CC
= 0V, V
BAT
= 2.3V to 5.5V
, T
A
= -40°C to +85°C, unless otherwise noted.) (Note 2)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
V
BAT
= 3.3V
80
Active Battery Current
(Note 5)
I
BATA
EO SC
= 0, BBS Q W = 0,
S C L = 400kH z, BB32kH z = 0
V
BAT
= 5.5V
200
µA
V
BAT
= 3.4V
1.5
2.5
Timekeeping Battery Current
(Note 5)
I
BATT
EOSC
= 0, BBSQW = 0,
SCL = SDA = 0V,
BB32kHz = 0,
CRATE0 = CRATE1 = 0
V
BAT
= 5.5V
1.5
3.0
µA
Temperature Conversion Current
I
BATTC
EOSC
= 0, BBSQW = 0, SCL = SDA = 0V
600
µA
Data-Retention Current
I
BATTDR
EOSC
= 1, SCL = SDA = 0V, +25°C
100
nA
