This Data Sheet may be revised by subsequent versions ©2003 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
21
EN29F040A
Rev. B, Issue Date: 2004/04/01
Table 7.
DC Characteristics
(T
a
= 0°C to 70°C or - 40°C to 85°C; V
CC
= 5.0V ± 10%)
Symbol Parameter
Test
Conditions
Min
Max
Unit
I
LI
Input Leakage Current
0V
≤
V
IN
≤
Vcc
±5
µA
I
LO
Output Leakage Current
0V
≤
V
OUT
≤
Vcc
±5
µA
I
CC1
Supply Current (read) TTL Byte
CE
= V
IL
;
OE
= V
IH
;
f = 6MHz
30
mA
I
CC2
Supply Current (Standby) TTL
CE
= V
IH
1.0
MA
I
CC3
Supply Current (Standby) CMOS
CE
= Vcc ± 0.3V
5.0
µA
I
CC4
Supply Current (Program or Erase)
Byte program, Sector or Chip
Erase in progress
30
mA
V
IL
Input Low Voltage
-0.5
0.8
V
V
IH
Input High Voltage
2
Vcc +
0.5
V
V
OL
Output Low Voltage
I
OL
= 2 mA
0.45
V
V
OH
Output High Voltage TTL
I
OH
= -2.5 mA
2.4 V
Output High Voltage CMOS
I
OH
= -100 µA
Vcc -
0.4V
V
V
ID
A9 Voltage (Electronic Signature)
10.5
11.5
V
I
LIT
A9 Current (Electronic Signature)
A9 = V
ID
100
µA
V
LKO
Supply voltage (Erase and
Program lock-out)
3.2 4.2 V
