This Data Sheet may be revised by subsequent versions ©2003 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
24
EN29F040A
Rev. B, Issue Date: 2004/04/01
Table 10. AC CHARACTERISTICS
Write (Erase/Program) Operations
Alternate
CE
Controlled Writes
Parameter
Symbols
Speed Options
JEDEC Standard
Description
-45 -55 -70 -90 Unit
t
AVAV
t
WC
Write Cycle Time
Min 45 55 70 90 ns
t
AVEL
t
AS
Address Setup Time
Min 0 0 0 0 ns
t
ELAX
t
AH
Address Hold Time
Min 35 45 45 45 ns
t
DVEH
t
DS
Data Setup Time
Min 20 25 30 45 ns
t
EHDX
t
DH
Data Hold Time
Min 0 0 0 0 ns
t
OES
Output Enable Setup Time
Min 0 0 0 0 ns
Read
0 0 0 0 0 ns
t
OEH
Output
Enable
Hold Time
Toggle and
Data Polling
10 10 10 10 10 ns
t
GHEL
t
GHEL
Read Recovery Time before
Write ( OE High to CE Low)
Min 0 0 0 0 ns
t
WLEL
t
WS
W E
SetupTime
Min 0 0 0 0 ns
t
EHWH
t
WH
W E
Hold Time
Min 0 0 0 0 ns
t
ELEH
t
CP
Write Pulse Width
Min 25 30 35 45 ns
t
EHEL
t
CPH
Write Pulse Width High
Min 20 20 20 20 ns
Typ 7 7 7 7 µs
t
WHWH
1
t
WHWH1
Programming Operation
Max 200 200 200 200 µs
Typ 0.3 0.3 0.3 0.3
s
t
WHWH
2
t
WHWH2
Sector Erase Operation
Max 5 5 5 5
s
Typ 3 3 3 3
s
t
WHWH
3
t
WHWH3
Chip Erase Operation
Max 35 35 35 35
s
t
VCS
Vcc Setup Time
Min 50 50 50 50 µs
t
VIDR
Rise Time to V
ID
Min 500 500 500 500 ns
