Keithley S530, User Manual

Page: 11 / 93

Section 2: Using the test subroutine library S530 Parametric Test System Test Subroutine Library User's Manual
2-4 S530-907-01 Rev. A / September 2015
Resistors, diodes, capacitors, and special structure subroutines
Subroutine Description Link
bkdn
Measure breakdown voltage (force I,
measure V) bkdn (on page 3-9)
cap
Measure two-terminal capacitance cap (on page 3-21)
fimv
Force current and measure voltage on device
with four high pins and four ground pins fimv (on page 3-27)
fvmi
Force voltage and measure current on device
with four input pins and four ground pins fvmi (on page 3-29)
leak
Measure leakage current at specified voltage leak (on page 3-48)
res
2-terminal resistance (force I, measure V) res (on page 3-55)
res2
2-terminal resistance with voltage limit res2 (on page 3-56)
res4
4-terminal resistance (force I, measure V) res4 (on page 3-57)
resv
2-terminal resistance (force V, measure I) resv (on page 3-58)
rvdp
4-terminal van der Pauw measurement rvdp (on page 3-59)
tox
Calculate oxide thickness from capacitance tox (on page 3-61)
vf
Measure the forward junction voltage of a
diode vf (on page 3-63)
MOSFET subroutines
Subroutine Description Link
bvdss
Measure drain-source breakdown voltage
(V
G
= 0)
bvdss (on page 3-17)
bvdss1
Measure drain-source breakdown voltage
using LPTLib
bsweepv
subroutine
bvdss1 (on page 3-19)
deltl1
Estimate delta L MOSFET parameter deltl1 (on page 3-23)
deltw1
Estimate delta W for a MOSFET deltw1 (on page 3-24)
gamma1
Estimate body effect (

)
gamma1 (on page 3-31)
gd
Calculate drain conductance of a MOSFET gd (on page 3-32)
id1
Measure drain current at specified V
GS
, V
DS
,
and V
BS
id1 (on page 3-40)
idsat
Measure drain current at V
DS
, V
BS
(V
D
= V
G
)
idsat (on page 3-42)
idgsvg
Measure IDS when VGS is swept at constant
V
DS
and V
BS
idvsvg (on page 3-45)
isubmx
Find peak substrate current at V
DS
,V
BS
isubmx (on page 3-46)
vg2
Measure gate-source voltage at I
DS
, V
DS
, V
BS
vg2 (on page 3-64)
vgsat
Measure V
GSAT
at specified I
DS
(V
GS
= V
D
)
vgsat (on page 3-66)
vt14
Estimate V
T
using two-point technique
vt14 (on page 3-70)
vtati
Find V
T
to produce specified I
DS
vtati (on page 3-71)
vtext
Extrapolate gate-source threshold voltage vtext (on page 3-73)
vtext2
Estimate V
T
using modified
vtext
subroutine
method
vtext2 (on page 3-76)
vtext3
Calculate V
T
using max slope method
vtext3 (on page 3-78)