S530 Parametric Test System Test Subroutine Library User's Manual
Section 3: Test subroutine library reference
S530-907-01 Rev. A / September 2015
3-19
bvdss1
This subroutine measures the drain-source breakdown voltage using the
bsweepv
LPTLib function.
Usage
double bvdss1 (int
d
, int
g
, int
s
, int
sub
, double
vdsmin
, double
vdsmax
, int
nstep
, double
ipgm
, double
udelay
, char
type
);
d
Input
The drain pin of the device
g
Input
The gate pin of the device
s
Input
The source pin of the device
sub
Input
The substrate pin of the device
vdsmin
Input
The starting drain-source voltage (V
DS
), in volts
vdsmax
Input
The ending V
DS
, in volts
nstep
Input
The number of voltage steps
ipgm
Input
Target drain-source current (V
CS
), in amperes
udelay
Input
The delay between V
DS
steps, in seconds
type
Input
Type of transistor:
"N"
or
"P"
Returns
Output
Measured breakdown voltage:
-1.0
= TYPE not "N" or "P"
+1.0E+21 = Device triggered on
vdsmin
+2.0E+21 = Device triggered on
vdsmax
Details
This subroutine sweeps the drain-source voltage from
vdsmin
to
vdsmax
while monitoring the drain
current with the gate grounded to the source. When the specified current level (
ipgm
) is reached, the
last drain-source voltage increment is returned as
bvdss1
.
If a positive substrate pin is specified, the substrate is grounded. If a positive substrate pin is not
specified, the substrate is left floating.
Set the
udelay
parameter to approximate
C
*
vdsmax
/
ipgm
, where
C
= junction capacitance of
the device under test.
V/I polarities
The polarities of
vdsmin
,
vdsmax
, and
ipgm
are determined by device type.
Source-measure units (SMUs)
SMU1: Forces V
DS
, programmed current limit = 1.25*
ipgm
, measures I
DS
