Datasheet
99
Electrical Specifications
NOTES:
1.
Unless otherwise noted, all specifications in this table apply to all processor frequencies.
2.
V
IL
is defined as the maximum voltage level at a receiving agent that will be interpreted as a logical low
value.
3.
V
IH
is defined as the minimum voltage level at a receiving agent that will be interpreted as a logical high
value.
4.
V
IH
and V
OH
may experience excursions above V
DDQ
. However, input signal drivers must comply with the
signal quality specifications.
5.
This is the pull down driver resistance. Refer to processor
I/O Buffer Models
for I/V characteristics.
6.
R
VTT_TERM
is the termination on the DIMM and in not controlled by the Processor.
7.
The minimum and maximum values for these signals are programmable by BIOS to one of the two sets.
8.
COMP resistance must be provided on the system board with 1% resistors. COMP resistors are to V
SS
.
Table 7-44.DDR3 Signal Group DC Specifications
Symbol
Parameter
Alpha
Group
Min
Typ
Max
Units
Notes
1
V
IL
Input Low Voltage
(e,f)
0.43*V
DDQ
V
2,4
V
IH
Input High Voltage
(e,f)
0.57*V
DDQ
V
3
V
OL
Output Low Voltage
(c,d,e,f)
(V
DDQ
/ 2)* (R
ON
/
(R
ON
+R
VTT_TERM
))
6
V
OH
Output High Voltage
(c,d,e,f)
V
DDQ
- ((V
DDQ
/
2)* (R
ON
/
(R
ON
+R
VTT_TERM
))
V
4,6
R
ON
DDR3 Clock Buffer On
Resistance
21
31
Ω
5
R
ON
DDR3 Clock Buffer On
Resistance
21
36
Ω
5
R
ON
DDR3 Command Buffer
On Resistance
16
24
Ω
5
R
ON
DDR3 Command Buffer
On Resistance
20
31
Ω
5
R
ON
DDR3 Control Buffer On
Resistance
21
31
Ω
5
R
ON
DDR3 Control Buffer On
Resistance
20
31
Ω
5
R
ON
DDR3 Data Buffer On
Resistance
21
31
Ω
5
R
ON
DDR3 Data Buffer On
Resistance
21
36
Ω
5
Data ODT
On-Die Termination for
Data Signals
(d)
102
51
138
69
Ω
7
I
LI
Input Leakage Current
±500
μ
A
SM_RCOMP0
COMP Resistance
(t)
99
100
101
Ω
8
SM_RCOMP1
COMP Resistance
(t)
24.7
24.9
25.1
Ω
8
SM_RCOMP2
COMP Resistance
(t)
128.7
130
131.3
Ω
8
