Datasheet
45
Electrical Specifications
NOTES:
1. Unless otherwise noted, all specifications in this table apply to all processor frequencies.
2. V
IL
is defined as the maximum voltage level at a receiving agent that will be interpreted as a logical low value.
3. V
IH
is defined as the minimum voltage level at a receiving agent that will be interpreted as a logical high
value.
4. V
IH
and V
OH
may experience excursions above VCCP. However, input signal drivers must comply with the
signal quality specifications in
5. This is the pull down driver resistance. Refer to processor I/O buffer models for I/V characteristics. Measured
at 0.31*VCCP. R
ON
(min) = 0.38*R
TT
,
R
ON
(typ) = 0.45*R
TT
,
R
ON
(max) = 0.52*R
TT
.
6. GTLREF should be generated from VCCP with a 1% tolerance resistor divider. The VCCP referred to in these
specifications is the instantaneous VCCP.
7. R
TT
is the on-die termination resistance measured at V
OL
of the AGTL+ output driver. Measured at
0.31*VCCP. R
TT
is connected to VCCP on die. Refer to processor I/O buffer models for I/V characteristics.
8. Specified with on die R
TT
and R
ON
are turned off.
9. Cpad includes die capacitance only. No package parasitics are included.
NOTES:
1. Unless otherwise noted, all specifications in this table apply to all processor frequencies.
2. The VCCP referred to in these specifications refers to instantaneous VCCP.
3. Refer to the processor I/O buffer models for I/V characteristics.
4. Measured at 0.1*VCCP.
5. Measured at 0.9*VCCP.
6. For Vin between 0 V and VCCP. Measured when the driver is tristated.
7. Cpad includes die capacitance only. No package parasitics are included
Table 3-23. AGTL+ Signal Group DC Specifications
Symbol
Parameter
Min
Typ
Max
Unit
Notes
1
VCCP
I/O Voltage
0.997
1.05
1.102
V
GTLREF
Reference Voltage
2/3 VCCP -
2%
2/3 VCCP
2/3 VCCP +
2%
V
6
V
IH
Input High Voltage
0.1
VCCP+0.1
V
3,6
V
IL
Input Low Voltage
-0.1
GTLREF-0.1
V
2,4
V
OH
Output High Voltage
VCCP
6
R
TT
Termination Resistance
47
55
63
Ω
7
R
ON
Buffer On Resistance
17.7
24.7
32.9
Ω
5
I
LI
Input Leakage Current
± 100
µA
8
Cpad
Pad Capacitance
1.8
2.3
2.75
pF
9
Table 3-24. CMOS Signal Group DC Specifications
Symbol
Parameter
Min
Typ
Max
Unit
Notes
1
VCCP
I/O Voltage
0.997
1.05
1.102
V
V
IL
Input Low Voltage
CMOS
-0.1
0.3*VCCP
V
2, 3
V
IH
Input High Voltage
0.7*VCCP
VCCP+0.1
V
2
V
OL
Output Low Voltage
-0.1
0
0.1*VCCP
V
2
V
OH
Output High Voltage
0.9*VCCP
VCCP
VCCP+0.1
V
2
I
OL
Output Low Current
1.49
4.08
mA
4
I
OH
Output High Current
1.49
4.08
mA
5
I
LI
Leakage Current
± 100
µA
6
Cpad
Pad Capacitance
1.0
2.3
3.0
pF
