Application Note
3 of 27
V 1.0
2021-04-30
CoolGaN™ IPS half-bridge evaluation board with IGI60F1414A1L
Introduction
1
Introduction
This hardware provides an easy and quick way to setup and test Infineon’s CoolGaN™ IPS half-bridge chipset.
The hardware is configurable for boost, buck, inverter operation, pulse testing or continuous full-power
operation. Multiple test points are provided to connect signals to an oscilloscope for observation and
measuring the switching performance of CoolGaN™ transistors and gate driver embedded in the chipset. This
board provides a quick way to evaluate the digital in-power-out feature of the installed CoolGaN™ IPS half-
bridge chipset.
The circuit board has a single PWM input intended for connection to a 50 Ω pulse or signal generator. Moreover,
direct access to the digital inputs of the IPS is provided for microcontroller interface. The power for the low
voltage side will be provided from a single 5 V external power supply. Default deadtime between the high and
low-side is pre-set to 100 ns, but is adjustable via trimpots by the user. An external (user-supplied) inductor is
needed to configure the hardware in multiple possible test setups through the supplied pluggable terminal-
block connector. The output and bus voltage can range up to 450 V which is limited by the capacitor rating. This
half-bridge can switch continuous currents of 4 A, and peak currents of 10 A, hard or soft-switching. Depending
on the IPS chipset power dissipation, the operating frequency can be up to 1 MHz (limited to about 3 W per
device with appropriate heatsink and airflow).
1.1
Evaluation board specifications
Table 1
Evaluation board specifications and limits
Parameter
Values
Unit Note
Min. Typ. Max.
V
cc
input voltage
4.8
5.0
5.2
V
V
cc
input current
25
mA
PWM logic input levels
(Applied to J1 terminal)
0
5
V
Standard 5 V TTL levels, 50 Ω terminated
PWM logic input levels
(Applied to TP1 and TP2)
0
5
V
Standard 3.3/5 V CMOS/TTL levels
V
in+
to V
in-
0
400
450
V
Limited by capacitor voltage ratings
V
O
to V
in-
0
450
V
(There may be ±30 V spikes appearing on V
o
)
Chipset transistor current, DC
4
A
Keep the case temperature below 125 °C
Chipset transistor current, pulse
(non-repetitive)
23
A
Keep the case temperature below 125 °C
Chipset total power dissipation
3
6
W
W
No heatsink (T
case
<125 °C, T
a
=25°C)
With heatsink, airflow to keep T
case
<125 °C
Operating frequency
(DC)
1
MHz
Within dissipation, temperature limits
PWM pulse width
100
∞
ns
With 100 ns deadtime setting
Deadtime adjustment range
0
180
ns
Default setting is 100 ns. If longer deadtime is
necessary, C9, C15 can be increased, thereby
extending the adjustment range.
Note:
The PCB dimensions are 60*70 mm (max).