IDT 89EBPES16T4G2, Manual

Page: 34 / 40

Fri Jun 15 14:48:04 2007 SHEET 7 OF 13
1.0 18-634-000
B.OH
2007
K. LEUNG
STGSCH-00114
89EBPES16T4G2
B
W15
W16
W12
W13
W9
W10
R126
R125
C49
8
7
6
5
4
3
2
1
Q5
C48
R127
R124
W14
8
7
6
5
4
3
2
1
Q6
R122
R121
C47
8
7
6
5
4
3
2
1
Q3
C46
R123
R120
8
7
6
5
4
3
2
1
Q4
W11 W8
R118
R117
C45
R119
C44
R116
8
7
6
5
4
3
2
1
Q2
8
7
6
5
4
3
2
1
Q1
6
6
6
6
6 6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
PMOSFET PMOSFET PMOSFET
12V_DS 12V_DS
5%
15
2%
0.012
6800PF
0.022UF
5%
15
0.02
2%
15
5%
6800PF
0.022UF
15
5%
2%
0.02
15
5%
2%
0.012
6800PF
5%
15
0.022UF
0.012
2%
0.02
2%
P6_PCIE_3_3AUX
P6_12V
P6_3_3V
12V_DS
P2_PCIE_3_3AUX
P2_12V
P2_3_3V
P4_PCIE_3_3AUX
P4_12V
P4_3_3V
P4_3VSENSE
P4_3VGATE
P6_12VGATE
P6_12VOUT
P6_3VOUT P2_3VOUT
P2_3VGATE
P2_3VSENSE
P2_12VOUT
P2_12VGATE
P2_12VSENSE
P4_3VOUT
P4_12VOUT
P4_12VGATE
P4_12VSENSE
P4_VAUX
P6_3VGATE
P6_VAUX
P6_12VSENSE
P2_VAUX
HOT PLUG - MOSFETS
P6_3VSENSE
TITLE
DRAWING NO.
AUTHOR CHECKED BY
COPYRIGHT (C) IDT
3
SIZE REV. FAB P/N
1
1
A A
B B
C C
D
D
2
2
4
4 5
6
6 7
7
8
3 8 5
6024 SILVER CREEK VALLEY RD. SAN JOSE, CA 95138
CONFIDENTIAL PROPERTY OF INTEGRATED DEVICE TECHNOLOGY, INC.
3_3V 3_3V 3_3V
BI
BI
BI
NMOSFET
S
S
S
G D
D
D
D
BI
BI
BI
3_3VAUX
IN
S
S D
D
D
D
S
G
BI
BI
BI
NMOSFET
S
S
S
G D
D
D
D
BI
BI
BI
3_3VAUX
S
S D
D
D
D
S
G
IN
3_3VAUX
IN
BI
BI
BI
BI
BI
BI
S
S D
D
D
D
S
G
NMOSFET
S
S
S
G D
D
D
D