Rev. 1.40
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BS67F340/BS67F350/BS67F360/BS67F370
Enhanced Touch A/D Flash MCU with LCD Driver
BS67F340/BS67F350/BS67F360/BS67F370
Enhanced Touch A/D Flash MCU with LCD Driver
Flash Memory Read/Write Procedure
After the Flash memory write function is successfully enabled through the preceding IAP procedure,
users must first erase the corresponding Flash memory block or page and then initiate the Flash
memory write operation. For the BS67F340 device the number of the block erase operation is 256
words per block, the available block erase address is only specified by FARH register and the content
in the FARL register is not used to specify the block address. For the BS67F350 and BS67F360/370
devices the number of the page erase operation is 32 and 64 words per page respectively, the
available page erase address is specified by FARH register and the content of FARL [7:5] and FARL
[7:6] bit field respectively.
Erase Block
FARH [3:0]
FARL [7:0]
0
0000
xxxx xxxx
1
0001
xxxx xxxx
�
0010
xxxx xxxx
3
0011
xxxx xxxx
4
0100
xxxx xxxx
�
0101
xxxx xxxx
�
0110
xxxx xxxx
7
0111
xxxx xxxx
8
1000
xxxx xxxx
9
1001
xxxx xxxx
10
1010
xxxx xxxx
11
1011
xxxx xxxx
1�
1100
xxxx xxxx
13
1101
xxxx xxxx
14
1110
xxxx xxxx
1�
1111
xxxx xxxx
“x”: don’t �a�e
BS67F340 Erase Block Number and Selection