Freescale Semiconductor MC9S08PA32, Technical Data Manual

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Table 10. Flash characteristics (continued)
C Characteristic Symbol Min
1
Typical
2
Max
3
Unit
4
D NVM Bus frequency f
NVMBUS
1 — 25 MHz
D NVM Operating frequency f
NVMOP
0.8 — 1.05 MHz
D Erase Verify All Blocks t
VFYALL
— — 17030 t
cyc
D Erase Verify Flash Block t
RD1BLK
— — 16977 t
cyc
D Erase Verify EEPROM Block t
RD1BLK
— — 843 t
cyc
D Erase Verify Flash Section t
RD1SEC
— — 517 t
cyc
D Erase Verify EEPROM Section t
DRD1SEC
0.10 0.10 0.11 ms
D Read Once t
RDONCE
— — 455 t
cyc
D Program Flash (2 word) t
PGM2
0.12 0.12 0.14 ms
D Program Flash (4 word) t
PGM4
0.20 0.21 0.24 ms
D Program Once t
PGMONCE
0.20 0.21 0.24 ms
D Program EEPROM (1 Byte) t
DPGM1
0.02 0.02 0.02 ms
D Program EEPROM (2 Byte) t
DPGM2
0.17 0.18 0.20 ms
D Erase All Blocks t
ERSALL
96.01 100.78 125.80 ms
D Erase Flash Block t
ERSBLK
95.98 100.75 125.76 ms
D Erase Flash Sector t
ERSPG
19.10 20.05 25.05 ms
D Erase EEPROM Sector t
DERSPG
4.81 5.05 6.30 ms
D Unsecure Flash t
UNSECU
96.01 100.78 125.80 ms
D Verify Backdoor Access Key t
VFYKEY
— — 469 t
cyc
D Set User Margin Level t
MLOADU
— — 442 t
cyc
C FLASH Program/erase endurance T
L
to
T
H
= -40 °C to 105 °C
n
FLPE
10 k 100 k — Cycles
C EEPROM Program/erase endurance TL
to TH = -40 °C to 105 °C
n
FLPE
50 k 500 k — Cycles
C Data retention at an average junction
temperature of T
Javg
= 85°C after up to
10,000 program/erase cycles
t
D_ret
15 100 — years
1. Minimun times are based on maxmum f
NVMOP
and maximum f
NVMBUS
2. Typical times are based on typical f
NVMOP
and maximum f
NVMBUS
3. Maximum times are based on minimum f
NVMOP
and maximum f
NVMBUS
4. t
cyc
= 1 / f
NVMBUS
Program and erase operations do not require any special power sources other than the
normal V
DD
supply. For more detailed information about program/erase operations, see
the Memory section.
6.3 Analog
Peripheral operating requirements and behaviors
MC9S08PA60 Series Data Sheet, Rev. 1, 10/9/2012.
20 Freescale Semiconductor, Inc.