Epson Q41856470000100, Applications Manual

Page: 6 / 18

RTC - 8564 JE/NB
Page - 3 MQ - 322 - 04
4. Absolute maximum ratings
GND=0 V
Parameter Symbol Condition Min. Max. Unit
Supply Voltage V
DD
Between V
DD
and GND
−
0.5
+6.5 V
Supply Voltage I
D
D V
DD
pin
−
50 50 mA
Input Voltage V
I
Input pin
GND
−
0.5
V
DD
+0.5 V
Output Voltage V
O
/ INT pin
GND
−
0.5
V
DD
+0.5 V
DC Input Current I
I
−
10 10 mA
DC Output Current I
O
−
10
10 mA
Storage Temperature Range T
STG
Stored bare product
after unpacking
−
55 +125
°
C
Soldering conditions T
SOL
Max. 2 times under 10 seconds below a temperature of +260 °C or for
3 minutes below a temperature of +230 °C
5. Recommended operating conditions
GND=0 V
Parameter Symbol Condition Min. Max. Unit
Supply voltage range V
DD
I
2
C-BUS access
at 400 kHz
1.8 5.5 V
Clock voltage range V
DD
V
LOW
5.5 V
Operating temperature range T
OPR
No condensation
−
40
+85
°
C
6. Frequency characteristics
GND=0 V
Parameter Symbol Condition Max. Unit
Frequency precision
∆
f / fo
Ta = +25
°
C
V
DD
=3.0 V
5
±
23
(
∗
1)
×
10
−
6
Frequency voltage characteristics f / V
Ta = +25
°
C
V
DD
= 1.0 V to 5.5 V
±
2 Max.
×
10
−
6
/ V
Frequency temperature characteristics Top
Ta =
−
10 to +70
°
C
V
DD
= 3.0 V
Reference at +25
°
C
+10 /
−
120
×
10
−
6
Oscillation startup-up time tSTA
Ta = +25
°
C
V
DD
= 1.8 V
3 Max. s
Aging fa
Ta = +25
°
C
V
DD
= 3.0 V ; first year
±
5 Max.
×
10
−
6
/ year
∗
1 )
Equivalent to 1 minute of monthly deviation. ( excluding offset )
7. Electrical characteristics
7.1. DC electrical characteristics
∗
If not specifically indicated, GND=0 V, V
DD
=1.8 V to 5.5 V
, Ta=
−
40
°
C to +85
°
C
Parameter Symbol Pin Condition Min. Typ. Max. Unit
Power current
(during access)
I
DDO
f
SCL
=400 kHz
f
SCL
=100 kHz
800
200
µ
A
µ
A
Power current
(not during access)
I
DD
f
SCL
=0 Hz, V
DD
=5.0 V
f
SCL
=0 Hz, V
DD
=3.0 V
f
SCL
=0 Hz, V
DD
=2.0 V
330
275
250 800
700
650 nA
nA
nA
Power current
(not during access)
(CLKOUT=32.768 kHz,
LOAD is 0 pF)
I
DD32K
f
SCL
=0 Hz, V
DD
=5.0 V
f
SCL
=0 Hz, V
DD
=3.0 V
f
SCL
=0 Hz, V
DD
=2.0 V
2.5
1.5
1.1 3.4
2.2
1.6
µ
A
µ
A
µ
A
"L" input voltage V
IL
GND
−
0.5 0.3
×
V
DD
V
"H" input voltage V
IH
0.7
×
V
DD
V
DD
+ 0.5 V
"L" output voltage I
OL
(SDA) SDA V
OL
=0.4 V, V
DD
=5 V
−
3 mA
"L" output current I
OL
(/INT) / INT V
OL
=0.4 V, V
DD
=5 V
−
1
mA
"L" output current
I
OL
(CLKOUT)
CLKOUT V
OL
=0.4 V, V
DD
=5 V
−
1 mA
"H" output current
I
OH
(CLKOUT)
CLKOUT V
OH
=4.6 V, V
DD
=5 V 1 mA
Leakage current I
LO
V
O
=V
DD
or GND
−
1
1
µ
A
Low voltage detection V
LOW
Ta=
−
40
°
C to +85
°
C
Ta=
−
20
°
C to +70
°
C
0.9
0.9 1.1
1.0
V