CY62157ESL MoBL
®
Document #: 001-43141 Rev. **
Page 6 of 12
Switching Characteristics
Over the Operating Range
[9]
Parameter
Description
45 ns
Unit
Min
Max
Read Cycle
t
RC
Read Cycle Time
45
ns
t
AA
Address to Data Valid
45
ns
t
OHA
Data Hold from Address Change
10
ns
t
ACE
CE LOW to Data Valid
45
ns
t
DOE
OE LOW to Data Valid
22
ns
t
LZOE
OE LOW to LOW-Z
[10]
5
ns
t
HZOE
OE HIGH to High-Z
[10, 11]
18
ns
t
LZCE
CE LOW to Low-Z
[10]
10
ns
t
HZCE
CE HIGH to High-Z
[10, 11]
18
ns
t
PU
CE LOW to Power Up
0
ns
t
PD
CE HIGH to Power Down
45
ns
t
DBE
BLE/BHE LOW to Data Valid
45
ns
t
LZBE
BLE/BHE LOW to Low-Z
[10, 12]
5
ns
t
HZBE
BLE/BHE HIGH to HIGH-Z
[10, 11]
18
ns
Write Cycle
[13]
t
WC
Write Cycle Time
45
ns
t
SCE
CE LOW to Write End
35
ns
t
AW
Address Setup to Write End
35
ns
t
HA
Address Hold from Write End
0
ns
t
SA
Address Setup to Write Start
0
ns
t
PWE
WE Pulse Width
35
ns
t
BW
BLE/BHE LOW to Write End
35
ns
t
SD
Data Setup to Write End
25
ns
t
HD
Data Hold from Write End
0
ns
t
HZWE
WE LOW to High-Z
[10, 11]
18
ns
t
LZWE
WE HIGH to Low-Z
[10]
10
ns
Notes
9. Test conditions for all parameters other than tri-state parameters assume signal transition time of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to
3V, and output loading of the specified I
OL
/I
OH
as shown in the
AC Test Loads and Waveforms on page 4
.
10. At any temperature and voltage condition, t
HZCE
is less than t
LZCE
, t
HZBE
is less than t
LZBE
, t
HZOE
is less than t
LZOE
, and t
HZWE
is less than t
LZWE
for any device.
11. t
HZOE
, t
HZCE
, t
HZBE
, and t
HZWE
transitions are measured when the outputs enter a high-impedance state.
12. If both byte enables are toggled together, this value is 10 ns.
13. The internal write time of the memory is defined by the overlap of WE, CE
= V
IL
, BHE, BLE or both = V
IL
. All signals must be active to initiate a write and any of these
signals can terminate a write by going inactive. The data input setup and hold timing must be referenced to the edge of the signal that terminates the write.
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