Cypress Semiconductor CY62157ESL, Specification Sheet

Page: 5 / 12

CY62157ESL MoBL
®
Document #: 001-43141 Rev. ** Page 5 of 12
Data Retention Characteristics
Over the Operating Range
Parameter Description Conditions Min Typ
[2]
Max Unit
V
DR
V
CC
for Data Retention 1.5 V
I
CCDR
Data Retention Current
CE > V
CC
– 0.2V,
V
IN
> V
CC
– 0.2V or V
IN
< 0.2V
V
CC
= 1.5V 2 5
μ
A
V
CC
= 2.0V 2 8
t
CDR
[6]
Chip Deselect to Data
Retention Time 0 ns
t
R
[7]
Operation Recovery Time t
RC
ns
Data Retention Waveform
Notes
6. Tested initially and after any design or process changes that may affect these parameters.
7. Full device operation requires linear V
CC
ramp from V
DR
to V
CC(min)
> 100
μ
s or stable at V
CC(min)
> 100
μ
s.
8. BHE.BLE is the AND of both BHE and BLE. Deselect the chip by either disabling chip enable signals or by disabling both BHE and BLE.
V
CC(min)
V
CC(min)
t
CDR
V
DR
> 1.5V
DATA RETENTION MODE
t
R
V
CC
CE or
BHE.BLE
[8]
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