AT90S4414/8515
76
Parallel Programming Characteristics
Figure 63. Parallel Programming Timing
Notes:
1. Use t
WLWH_CE
for Chip Erase and
t
WLWH_PFB
for Programming the Fuse Bits.
2. If t
WLWH
is held longer than
t
WLRH
, no RDY/BSY pulse will be seen.
Table 31. Parallel Programming Characteristics T
A
= 25
°
C ± 10%, V
CC
=5V ± 10%
Symbol
Parameter
Min
Typ
Max
Units
V
PP
Programming Enable Voltage
11.5
12.5
V
I
PP
Programming Enable Current
250
µA
t
DVXH
Data and Control Setup before XTAL1 High
67
ns
t
XHXL
XTAL1 Pulse Width High
67
ns
t
XLDX
Data and Control Hold after XTAL1 Low
67
ns
t
XLWL
XTAL1 Low to WR Low
67
ns
t
BVWL
BS Valid to WR Low
67
ns
t
RHBX
BS Hold after RDY/BSY High
67
ns
t
WLWH
WR Pulse Width Low
67
ns
t
WHRL
WR High to RDY/BSY Low
20
ns
t
WLRH
WR Low to RDY/BSY High
0.5
0.7
0.9
ms
t
XLOL
XTAL1 Low to OE Low
67
ns
t
OLDV
OE Low to DATA Valid
20
ns
t
OHDZ
OE High to DATA Tri-stated
20
ns
t
WLWH_CE
WR Pulse Width Low for Chip Erase
5
10
15
ms
t
WLWH_PFB
WR Pulse Width Low for Programming the Fuse
Bits
1.0
1.5
1.8
ms
Data & Contol
(DATA, XA0/1, BS)
DATA
W
rite
Read
XTAL1
t
XHXL
t
WLWH
t
DVXH
t
XLOL
t
OLDV
t
WHRL
t
WLRH
WR
RDY/BSY
OE
t
XLDX
t
XLWL
t
RHBX
t
OHDZ
t
BVWL