Xycom XVME-113, Руководство пользователя

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Chapter 1 -
INTRODUCTION
1.1
INTRODUCTION
The XVME-113 RAM/ROM Memory Module is a double-high VMEbus compatible board that can accommodate up to
12 Mbytes of RAM, 24 Mbytes of EPROM, 12 Mbytes of FLASH or 12 Mbytes of EEPROM. The module is designed with
an on-board battery backup circuit to provide power to CMOS RAM devices in the event of a power failure. A real time
clock is also added, as well as a readable port for the memory device size and type for each bank.
The XVME-113 has 24 32-pin JEDEC sockets, which are divided into two separate memory banks. Bank one contains 16
memory sites and bank two contains 8 memory sites. Each bank is designed to employ memory devices of the same type
and speed, and each bank can be independently configured (via jumpers and switches) in terms of:
·
VME Address
·
Address Modifier Decode
·
Memory Device Speed
·
Memory Device Type
·
Memory Device Size
·
Memory Backup Power Source
The XVME-113 RAM/ROM Memory Module has power down memory protection circuitry which prevents data from being
written to memory when the power supply voltage falls below 4.65 volts. The module also has the option of asserting
SYSRESET under this condition. Another option is to drive SYSFAIL when a low battery is detected on power up.
The XVME-113 is designed to be used with 8-, 16-, and 32-bit VMEbus processor modules. It supports read modify write
(RMW) cycles as well as unaligned transfers (UAT).