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VisIC V22N65A GaN Half Bridge Evaluation Board
User Manual USG-022650-004
All the above is subject to T’s & C’s agreed by the parties – VER 3.4
Preliminary Data Sheet: VisIC, Ltd. reserves the right to make design improvement changes at any time.
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User Guide USG-022650-001
Page | 15
5.
Test Procedure Examples
5.1.
Measurement of switching energy
5.1.1.
Basics of double pulse method
The “double pulse” is popular method for stressing of power switching semiconductors to evaluate
their switching performance.
The basic principle is to apply a double pulse to the gate of the inductor loaded low side GaN Switch
to turn it on and off two times. During the first pulse, the current in the inductor is increasing linearly
to some target level. During the off time the energy stored in the inductor is released through the
high side GaN Switch (see Fig. 7). The second turn-on of the low side switch causes the specified
inductor current to flow through the low side GaN Switch while the voltage on the GaN Switch
decreases from its specified level. So the above method of current loading of the switch provides a
test of the dynamic switching characteristics under real hard-switching conditions.
Low side
All switch
High side
All switch
Coil
Out
+HV
-HV
Driver
Current
shunt
(a)
(b)
Fig. 7
“Double pulse” method for measurement of the switching energy (a) board connections; (b)
simplified waveforms for low side turn-on
5.1.2.
Board operation for measurement of the switching energy
1.
Connect the auxiliary power supply to the +12V connector.
2.
Connect the function generator set for double pulse TTL level signal to the PWM IN 1
connector:
The double pulse signal should be chosen according to the coil inductance
The first pulse duration should be enough to charge the coil to the desired current level