29
32” TFT TV Service Manual
06/03/2006
12.19. NDS8947
12.19.1. General Description
These P-Channel enhancement mode power field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This very high density process is especially tailored to
minimize on-state resistance and provide superior switching performance. These devices are particularly
suited for low voltage applications such as notebook computer power management and other battery
powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
12.19.2. Features
•
-
4A, -30V. R
DS(ON)
= 0.065W @ V
GS
= -10V
R
DS(ON)
= 0.1W @ V
GS
= -4.5V.
•
High density cell design for extremely low R
DS(ON).
•
High power and current handling capability in a widely used surface mount package.
•
Dual MOSFET in surface mount package.
