V VIZIO P42HDTV10A, Руководство по обслуживанию

Страница: 70 / 219

CONFIDENTIAL – DO NOT COPY Page 8- 38
File No. SG-0184
DDR SDRAM (NT5DS16M16CS-5T) Application :
Functional Description
The 256Mb DDR SDRAM is a high-speed CMOS, dynamic random-access memory containing
268, 435, 456 bits. The 256Mb DDR SDRAM is internally configured as a quad-bank DRAM.
The 256Mb DDR SDRAM uses a double-data-rate architecture to achieve high-speed operation.
The double-data-rate architecture is essentially a
2n prefetch architecture, with an interface
designed to transfer two data words per clock cycle at the I/O pins. A single read or write access
for the 256Mb DDR SDRAM consists of a single
2n -bit wide, one clock cycle data transfer at the
internal DRAM core and two corresponding n-bit wide, one-half clock cycle data transfers at the
I/O pins.
Read and write accesses to the DDR SDRAM are burst oriented; accesses start at a selected
location and continue for a programmed number of locations in a programmed sequence.
Accesses begin with the registration of an Active command, which is then followed by a Read or
Write command. The address bits registered coincident with the Active command are used to
select the bank and row to be accessed (BA0, BA1 select the bank; A0-A12 select the row). The
address bits registered coincident with the Read or Write command are used to select the
starting column location for the burst access.
Prior to normal operation, the DDR SDRAM must be initialized. The following sections provide
detailed information covering device initialization, register definition, command descriptions and
device operation.