Texas Instruments UCC5304EVM-035, Руководство пользователя, Страница: 2 / 21

Introduction
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2 SLUUC86 – March 2020
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Using the UCC5304EVM-035
1 Introduction
The UCC5304EVM-035 device is designed for evaluation of the UCC5304 device, with a 4-A source and
6-A sink peak current for driving Si MOSFETs and GaN FETs. Developed for high voltage applications
where isolation and reliability are required, the UCC5304 device delivers reinforced isolation of 5.7-kV
RMS
and a surge immunity tested up to 7.8-kV, with a common mode transient immunity (CMTI) greater than
100 V/ns. The device has an impressive propagation delay of 28 ns and the tightest part-to-part delay
matching in the industry of less than 5 ns, which enables high-switching frequency, greater power density,
and higher efficiency.
The flexible, universal capability of the UCC5304 device, with up to 5.5-V VCCI and 18-V VDD, allows it to
be used as a low-side or high-side driver with independent PWM inputs. With its integrated functions,
advanced protection features (UVLO), and optimized switching performances, the UCC5304 device
enables designers to build smaller, more robust designs for enterprise, telecom, automotive, and industrial
applications, allowing for faster time to market.