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SLUU131A – September 2002 – Revised February 2003

7

 TPS40001 Based Converter Delivers 10-A Output

4.4

Output Capacitor Selection

Selection of the output capacitor is based on many application variables, including function, cost, size, and
availability. First, the minimum allowable output capacitance should be determined by the amount of inductor
ripple current and one-half the allowable output ripple, as given in equation (4).

C

OUT(min)

+

I

RIPPLE

8

 

f

 

V

RIPPLE

+

4 A

8

 

300 kHz

 

25 mV

+

67

m

F

This only affects the capacitive component of the ripple voltage. In addition, the voltage component due to the
capacitor ESR must be considered, shown in equation (5).

ESR

Cout

v

V

RIPPLE

I

RIPPLE

+

25 mV

4 A

+

6.25 m

W

To minimize capacitor size while maintaining good transient response, two 470-

µ

F POSCAPs (with an ESR of

10 m

 each) are fitted in paralleled with a 1-

µ

F ceramic capacitor.

4.5

MOSFET Selection

One constraint of this design is the use of one SO-8 MOSFET in the upper switch device and one SO-8 in the
lower synchronous rectifier location in the buck converter power stage. The upper device loss is usually
dominated by switching loss, so a device with lower gate charge and switching times was selected. Since this
application has a relatively high output voltage, the upper device runs at a high duty cycle and needs to have
a low R

DS(on)

 to keep conduction losses low, and an 8-m

 device with a maximum gate charge of 30 nC is

selected. The same device is fitted in the bottom switch location to achieve high efficiency.

4.6

Short Circuit Protection

The TPS40003 implements short circuit protection by comparing the voltage across the topside MOSFET while
it is on to a voltage dropped from VDD by R

LIM

 due to an internal current source of 15 

µ

A inside pin 1. Due to

tolerances in the current source and variations in the power MOSFET on-voltage versus temperature, the short
circuit level can protect against gross overcurrent conditions only, and should be set much higher than rated
load. In this particular case, R

LIM

 is selected as shown in equation (6).

R

LIM

+

R2

+

3

 

I

OUT

 

R

DS(on)

15

m

A

+

3

 

10 A

 

0.008

W

15

m

A

+

15 k

W

For this design, a standard value of 16.2 k

 is selected for R2. The factor of 3 in the equation accounts for the

variations in component tolerances (both initial and over temperature) and output current ripple. The component
tolerances include MOSFET R

DS(on)

, I

LIM

 sink current, and the V

OS

 offset voltage of SW vs I

LIM

. The high

currents that are switched under short circuit conditions may cause SW pin 8 to be driven below ground several
volts, possibly injecting substrate current which can cause improper operation of the device. A 3.3-

 resistor

has been placed in series with this pin to limit its excursion to safe levels.

(4)

(5)

(6)

Содержание TPS40001

Страница 1: ...User s Guide TPS40001 Based Converter Delivers 10 A Output User s Guide ...

Страница 2: ...e handling or use of the goods Please be aware that the products received may not be regulatory compliant or agency certified FCC UL CE etc Due to the open construction of the product it is the user s responsibility to take any and all appropriate precautions with regard to electrostatic discharge EXCEPT TO THE EXTENT OF THE INDEMNITY SET FORTH ABOVE NEITHER PARTY SHALL BE LIABLE TO THE OTHER FOR ...

Страница 3: ...certainty as to the load specification please contact a TI field representative During normal operation some circuit components may have case temperatures greater than 50 C The EVM is designed to operate properly with certain components above 50 C as long as the input and output ranges are maintained These components include but are not limited to linear regulators switching transistors pass trans...

Страница 4: ... to reduce conduction losses and increase silicon device utilization Predictive Gate Drive technology controls the delay from main switch turn off to synchronous rectifier turn on and also the delay from rectifier turn off to main switch turn on This allows minimization of the losses in the MOSFET body diodes both conduction and reverse recovery This design note provides details on a buck converte...

Страница 5: ...SLUU131A September 2002 Revised February 2003 5 TPS40001 Based Converter Delivers 10 A Output 3 Schematic Figure 1 Application Diagram for the TPS40002 3 ...

Страница 6: ...ns arising from crossing the DCM boundary A standard value of 1 µH with a resistance of 3 5 mΩ is selected At full load the power loss is only 0 35 W which is only 1 4 of the 25 W output power 4 3 Input Capacitor Selection Bulk input capacitor selection is based on allowable input voltage ripple and required RMS current carrying capability In typical buck converter applications the converter is fe...

Страница 7: ...ce runs at a high duty cycle and needs to have a low RDS on to keep conduction losses low and an 8 mΩ device with a maximum gate charge of 30 nC is selected The same device is fitted in the bottom switch location to achieve high efficiency 4 6 Short Circuit Protection The TPS40003 implements short circuit protection by comparing the voltage across the topside MOSFET while it is on to a voltage dro...

Страница 8: ...ation because the 1 µF is effectively out of the picture at these relatively low frequencies The feedback compensation network is implemented to provide two zeroes and three poles The first pole is placed near the origin to improve dc regulation The first zero is placed below fC at 2 2 kHz in equation 9 fz1 1 2 p ǒR6 R7 Ǔ C15 The second zero is placed at 18 kHz shown in equation 10 fz2 1 2 p R4 C7...

Страница 9: ...noisy An R C network fitted between this node and ground can help reduce ringing and voltage overshoot on Q2 This ringing noise should be minimized to prevent it from confusing the control circuitry which is monitoring this node for current limit Predictive Gate Drivet and DCM control functions As a starting point the snubber capacitor C12 is generally chosen to be 5 to 8 times larger than the par...

Страница 10: ...charge needed to enhance the N channel MOSFETs Effective heat removal allows the use of ultra small packaging while maintaining high component reliability To effectively remove heat from the PowerPADt package a thermal land should be provided directly underneath the package This thermal land usually has vias that help to spread heat to internal copper layers and or the opposite side of the PCB The...

Страница 11: ...ormance Data 6 1 Test Setup LOAD DVM2 DVM1 SCOPE Load adjustable from 0 10Amps GND VOUT VIN GND SLUP183A J1 J2 TP6 TP5 TP7 TP1 TP3 TP2 TP4 dc power supply adjustable from 0 V to 5 V Input wires 16 gauge or larger as short as feasible Output wires 16 gauge or larger as short as feasible IIN IOUT Figure 4 Test Setup ...

Страница 12: ...sured efficiency The input and output voltages are measured on the PCB as shown in the test diagram to avoid the losses associated with the input and output connectors Efficiency EFFICIENCY vs OUTPUT CURRENT IOUT Output Current A 50 55 60 65 70 75 80 85 90 95 100 0 00 2 00 6 00 8 00 10 00 4 00 Figure 5 Figure 6 shows the switch node at VIN 5 V and IOUT 10 A As the picture indicates there is almost...

Страница 13: ...hows the output voltage ripple at high VIN and full load which is the worst case condition for output voltage ripple t Time 1 µs div 10 mV div OUTPUT VOLTAGE RIPPLE Figure 7 Figure 8 shows the transient response with a 50 load step from 2 5 A to 7 5 A t Time 20 µs div 50 mV div TRANSIENT RESPONSE Figure 8 ...

Страница 14: ...131A September 2002 Revised February 2003 14 TPS40001 Based Converter Delivers 10 A Output 7 PCB Layout The PCB top assembly and copper layers are shown in Figures 9 through 11 Figure 9 Figure 10 Figure 11 ...

Страница 15: ...805 Panasonic ECJ 2YB1A105K C7 1 Ceramic 1 5 nF 50 V X7R 10 805 Vishay VJ0805Y152KXAAT C8 C9 2 POSCAP 470 µF 4 V 10 mΩ 20 7343 D Sanyo 4TPD470M Terminal Block J1 J2 2 4 pin 15 A 5 1 mm 291126 OST ED2227 Inductor L1 1 Inductor SMT 1 µH 15 A 3 5 mΩ 0 51 x 0 51 Vishay IHLP 5050CE 01 MOSFET Q1 Q2 2 MOSFET N channel 12 V 17 A 5 5 mΩ SO8 Siliconix Si4866DY Resistor R1 R5 1 Chip 1 8 Ω 1 10 W 5 805 Std St...

Страница 16: ...nt that any license either express or implied is granted under any TI patent right copyright mask work right or other TI intellectual property right relating to any combination machine or process in which TI products or services are used Information published by TI regarding third party products or services does not constitute a license from TI to use such products or services or a warranty or end...

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