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UPER P4SS8/P4SSE
User’s Manual
for faster application. The settings for this option are Disabled and Enabled.
(The optimal settings are Cached for C000, C400, C800 anc CC00 and
Disabled for all the other addresses.
Memory Auto Precharge
The options for this setting are Enabled and Disabled. When enabled, an
Auto Precharge for read/writes based on speculative algorithms is per-
formed.
Write Combining for P6-to-PCI
This settings for this option are Disabled and Enabled. This enables or
disables the combining (bursting) of accesses within the PCI memory re-
gions.
Memory Writing Posting
The settings are Enabled and Disabled.
Scrubbing Enable
The settings are Enabled and Disabled. Scrubbing writes corrected ECC
data back into memory.
Memory Timing Control
Determines how the memory timing is controlled. Auto lets BIOS program
the memory timing from SPD data. Manual allows the user to select the
appropriate memory timing.
Act to Deact
The settings are 5 Clks and 6 Clks.
Act to Read/Write
The settings are 2 Clks and 3 Clks.
RAS Precharge Time
This determines the duration of the time interval during which the Row
Address Strobe signal to a DRAM is held low during normal Read and Write
Cycles. The settings are 2 Clks and 3 Clks.
Содержание SUPER P4SS8
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