STMicroelectronics STM32F038C6, Руководство пользователя

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Electrical characteristics STM32F038x6
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6.3.2 Operating conditions at power-up / power-down
The parameters given in Table 19 are derived from tests performed under the ambient
temperature condition summarized in Table 18 .
6.3.3 Embedded reference voltage
The parameters given in Table 20 are derived from tests performed under the ambient
temperature and supply voltage conditions summarized in Table 18: General operating
conditions .
6.3.4 Supply current characteristics
The current consumption is a function of several parameters and factors such as the
operating voltage, ambient temperature, I/O pin loading, device software configuration,
operating frequencies, I/O pin switching rate, program location in memory and executed
binary code.
The current consumption is measured as described in Figure 12: Current consumption
measurement scheme .
Table 19. Operating conditions at power-up / power-down
Symbol Parameter Conditions Min Max Unit
t
VDD
V
DD
rise time rate
-
0
∞
µs/V
V
DD
fall time rate 20
∞
t
VDDA
V
DDA
rise time rate
-
0
∞
V
DDA
fall time rate 20
∞
Table 20. Embedded internal reference voltage
Symbol Parameter Conditions Min Typ Max Unit
V
REFINT
Internal reference voltage –40 °C < T
A
< +105 °C 1.16 1.2 1.25 V
t
START
ADC_IN17 buffer startup
time
- - - 10
(1)
µs
t
S_vrefint
ADC sampling time when
reading the internal
reference voltage
-
4
(1)
1. Guaranteed by design, not tested in production.
- - µs
Δ
V
REFINT
Internal reference voltage
spread over the
temperature range
V
DDA
= 3 V - -
10
(1)
mV
T
Coeff
Temperature coefficient -
- 100
(1)
-
100
(1)
ppm/°C
T
VREFINT_RDY
(2)
2. Guaranteed by design, not tested in production. This parameter is the latency between the time when pin
NPOR is set to 1 by the application and the time when the VREFINTRDYF status bit is set to 1 by the
hardware.
Internal reference voltage
temporization
- 1.5 2.5 4.5 ms