
29
AK53 D.O.C. Service Manual
22/03/2004
12.14.TCET1102G (IC801)
12.14.1.Description
The TCET110/ TCET2100/ TCET4100 consists of a phototransistor optically coupled to a gallium
arsenide infrared-emitting diode in a 4-lead up to 16-lead plastic dual inline package. The elements are
mounted on one lead frame using a
coplanar techniqu
e, providing a fixed distance between input and
output for highest safety requirements.
12.14.2.Applications
Circuits for safe protective separation against electrical shock according to safety class II (reinforced
isolation):
For appl. class I – IV at mains voltage =300 V
For appl. class I – III at mains voltage =600 V
According to VDE 0884, table 2, suitable for:
Switch-mode power supplies, line receiver, computer
peripheral interface, microprocessor system interface.
12.14.3.Features
VDE 0884 related features:
Rated impulse voltage (transient overvoltage) V
IOTM
= 8 kV peak
Isolation test voltage (partial discharge test voltage) V
pd
= 1.6 kV
Rated isolation voltage (RMS includes DC) V
IOWM
= 600 V
RMS
(848 V peak)
Rated recurring peak voltage (repetitive) V
IORM
= 600 V
RMS
General features:
CTR offered in 9 groups
Isolation materials according to UL94-VO
Pollution degree 2 (DIN/VDE 0110 / resp. IEC 664)
Climatic classification 55/100/21 (IEC 68 part 1)
Special construction: Therefore, extra low coupling capacity of typical 0.2pF, high
C
ommon
M
ode
R
ejection
Low temperature coefficient of CTR
G = Leadform 10.16 mm; provides creepage distance > 8 mm, for TCET2100/ TCET4100 optional;
suffix letter ‘G’ is not marked on the optocoupler
Coupling System U
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