6-1
Samsung Electronics
6. Block Diagram
MA
IN
POW
E
R
CORD
K
S
3
2
C
6
5
100
AR
M
7
T
GE
U
P1
2
8
4
IT
U
I/O
I/F
CACH
E(
6
K
)
DM
AC
PV
C
UA
R
T
*2
ME
MOR
Y
I/
F
MOD
E
M
14
40
0
b
p
s
DRA
M
(2
M
B
)
DRA
M
(O
p
ti
o
nal
)
CI
S
TX
M
O
TO
R
DRI
V
E
R
TX
MO
T
O
R
RT
C
Bac
k-
up
P
a
rt
LI
U
MO
D
E
M
&
EXT
_
P
H
O
N
E
SEPER
AT
IN
G
PAR
T
6
0
0/
/6
00
Tx
:R
x
EXT
ER
N
A
L
PH
O
N
E
DE
T
E
CTI
O
N
PAR
T
EXT
E
R
N
A
L
PH
O
N
E
LI
N
E
6
0
0/
/6
00
Tx
:R
x
TRAN
SF
O
R
M
ER
TRAN
SF
O
R
M
ER
FL
A
S
H
ME
MO
R
Y
(1
M
B
)
+5
V
UA
RT
-5
V
SC
A
N
B
o
a
rd
LC
D
DOC
SE
N
S
O
R
SM
PS
HV
PS
+2
4
V
RX
MOT
O
R
SO
L
E
N
O
ID
E
EN
G
IN
E
B’
D
FAN
OP
C_
F
U
S
E
Au
d
io
P
a
rt
EXI
T
SENSO
R
MH
V
OP
C
G
ND
SU
P
P
L
Y
DEV
TH
V
OP
E
MI
C
O
M
-
L
CD
Dr
iv
e
-
K
ey
Sc
an
CI
S
INT
ERF
A
CE
PA
RT
