8-53
R530/R730
8. Block Diagram and Schematic
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
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Samsung
Confidential
Samsung
Confidential
Samsung
Confidential
0
RE
V
0
N10P-GE
D
PROPRIETARY INFORMATION THAT IS
SAMSUNG ELECTRONICS CO’S PROPERTY.
DO NOT DISCLOSE TO OR DUPLICATE FOR OTHER
S
3
C
SAMSUN
G
A
N10M-GS
0.8V
1.03V
2
2
B
PART NO
.
1
1
DEV. STEP
1.03V
SAMSUNG PROPRIETAR
Y
THIS DOCUMENT CONTAINS CONFIDENTIA
L
N11P-GE1
EXCEPT AS AUTHORIZED BY SAMSUNG
.
0
FOR ONLY ES SAMPLE
0.95V
1.0320V
0.95V
0.8450V
0.85V
OCP(Vally) : 10uA *(Rilim / Rdson)
DESIGN
External Graphic Core Power
1.03V
1
1.03V
FOR EM
I
LAST EDIT
0.95V
MODULE CODE
DAT
E
---------
---------
4
OCP(Vally) : 16.6A @ N11M
---------
Rdson ; Max 16.5mohm
VID1
1
Bremen-
L
PWR_MV_Cantiga
EGFX CORE
N10P-GS
VID0
ELECTRONICS
PAGE
B
D
CHECK
APPROVAL
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OF
4
3
A
N11M-GE1
0.9933V
C
0.80
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0.85V
0.8018V
TITLE
1
1
1.03V
0.85V
0.8V
0.95V
0.95V
25
V
Jun PARK
YM.AHN
HJ.KIM
9/3/2009
PV
1.0
October 27, 2009 14:27:43 PM
BA41-xxxxxA
53
59
2409-00117
6
2.5V
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5
6
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7
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2
3
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3
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6
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2409-00117
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1
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1%
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3.
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10
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1%
R
13
8
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10
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F
25
V
C137
PNS_EGFXVR_BST_M
N
PNS_EGFXVR_BST_RC_MN
PNS_EGFXVR_TG_MN
ANS_EGFXVR_BG_MN
EGFXVR_EN_MN
EGFXVR_FB_M
N
EGFXVR_ILIM_MN
PNS_EGFXVR_PHASE_MN
EGFXVR_VDDSENSE_RR_M
N
EGFXVR_VOUT_MN
GFX3_VOLTID0
GFX3_VOLTID1
EGFXVR_D0_MN
EGFXVR_D1_MN
EGFXVR_D0_D1_RC_M
N
EGFXVR_D1_R_MN
GFX1_VDDSENS
E
KBC3_PWRON
PNS_EGFXVR_PHASE_RC_M
N
EGFXVR_PGOOD_M
N