8-50
R530/R730
8. Block Diagram and Schematic
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
- This Document can not be used without Samsung's authorization -
Samsung
Confidential
Samsung
Confidential
Samsung
Confidential
2
Rdson
;
PROPRIETARY INFORMATION THAT IS
B
DEV. STEP
P3.3V_AUX & P5.0V_ALW
AP4232BGM -> NEW
Elna New($0.09)
330KHz/375KHz@RT8205
4
(PWM
)
Elna New($0.09)
FOR EM
I
C
D
P3.3V Limit ; 4A
CHECK
A
245KHz/305KHz@TPS51125
Misan , Maglayer
4
OF
C
B
SAMSUN
G
PART NO
.
RE
V
EXCEPT AS AUTHORIZED BY SAMSUNG
.
DAT
E
Rilim = (Iilim * Rdson)*10/10uA
D
Set : 3.333V
DRA
W
PWR_MV_3V_5V
P3.3V_AUX / P5.0V_AUX
SAMSUNG PROPRIETAR
Y
P5.0V Limit ; 9A
365KHz/460KHz@TPS5112
5
TITLE
Top Max 19mohm
Bottom Max 11mohm
(Auto Skip
)
FOR EM
I
A
Misan , Maglayer
LAST EDIT
SAMSUNG ELECTRONICS CO’S PROPERTY.
P
A
G
E
Rdson : Max 32mohm
FCCM -> 5.10
0
3
1
ELECTRONICS
3
400KHz/500KHz@RT820
5
2
THIS DOCUMENT CONTAINS CONFIDENTIA
L
MODULE CODE
1
DO NOT DISCLOSE TO OR DUPLICATE FOR OTHER
S
Set : 5.064
V
PSV -> 5.129
TPS51125 2nd
APPROVAL
P5.0V_STB
Jun PARK
YM.AHN
HJ.KIM
undefined
01/09/2008
PV
1.0
October 27, 2009 14:27:43 PM
BA41-xxxxxA
50
59
Bremen-
L
AON6912L Q2
1
D1
2
3
D2
D3
4
9
D4
1
G1
8
G2
5
S1
S1_D
2
10
S2
6
7
S3
G_P3.3V
0505-00252
6
6.3V
330uF
EC13
2409-00117
5
Can 6T
15mohm
C884
6.3V
1n
F
C
18
4
50
V
Q19
D
3
1
G
2
S
G_P3.3V
10000nF-X5
R
G_P3.3V
RHU002N06
Q17
RHU002N06
3
D
G
1
S
2
44-D2
RHU002N06 Q16
D
3
1
G
2
S
C
90
3
4700nF-X5R
25V
nostuf
f
1%
1
2
3
R724
15
K
R
73
1
3.
3
nostuff
D10
BAT54C
Q18
RHU002N06
3
D
G
1
S
2
25
V
R743
3.
3
C
10
46
4700nF-X5R
56-C4
51-C4,55-B4
44-C4,50-B4
25V
C886
100nF
G_P3.3V
10
R
16
4
1%
nostuff
25
V
C154
10nF
10
0K
R
15
3
1%
20
%
C902
22000nF-X5
R
6.3V
EC14
330uF
6.3V
15mohm
CAN 6T
G_P3.3V
RE
F
SKIPSE
L
14
TONSEL
4
21
UGATE1
10
UGATE2
VI
N
16
24
VOUT
1
7
VOUT
2
VREG
3
8
V
R
E
G
5
17
2409-001175
2
FB
1
5
FB
2
19
LGATE1
12
LGATE2
18
NC
25 PAD
PGND
15
PGOO
D
23
20
PHASE1
11
PHASE2
3
RT8205AGQW
1203-005735
22
BOOT
1
9
BOOT
2
13
EN
ENTRIP1
1
ENTRIP2
6
130K
R121
1%
U512
1%
44-B3
3.9uH
L9
CMI-SSP10L48FH-3R9M
2703-00369
5
R
16
7
10
3.
3
VDC
P3.3V_MICOM
R
73
2
EC8
68uF
25V
AL
2402-001144
0505-00258
1
AP4232BGM-H
F
Q20-
2
D1
5
6
D2
4
G
3
S
P3.3V_MICO
M
P3.3V_MICOM
R742
0
nostuff
4.7nF
C155
R117
1%
25V
10
V
P5.0V_STB
10K
10V
nostuff
C
87
8
10
0n
F
nostuff
C882
100nF
VDC
0-1005
R128
G_P3.3V
G_P3.3V
VDC
G_P3.3V
0-1005
R741
1% 10
R17
0
G_P3.3V
P5.0V_ALW
10
K
R
72
5
1%
nostuff 50
V
C
18
2
1n
F
1%
R
15
2
680K
nostuff
Q20-
1
AP4232BGM-H
F
0505-00258
1
7
D1
D2
8
G
2
S
1
0.22nF
C
87
9
50
V
nostuff
R122
100K
G_P3.3V
1% 30
0K
R
13
7
1%
R118
0
100K
R119
1%
10V
100nF
C231
1%
R120
1M
nostuf
f
nostuff
R116
100K
1%
10
K
R723
1%
3.9uH L10
CMI-SSP10L48FH-3R9
M
2703-003695
SHORT2
INSTPAR
G_P3.3V
1%
R730
100K
nostuf
f
P2.0V_RE
F
100nF
C901
25V
220n
F
C88
0
25
V
P5.0V_STB
100n
F
C90
8
25
V
100nF
C885
25V
VDC
100nF
C
19
4
25
V
10
V
56-C4
51-C4,55-B4
44-C4,50-A4
P3.3V_MICO
M
nostuf
f
50
V
C881
0.22nF
C
23
0
10
0n
F
R
72
7
15
K
1%
1%
R
72
6
470K
2402-001144 AL 25V
68uF EC9
P2.0V_REF
1%
R160
10
1n
F
C18
7
50
V
R127
0
nostuff
P3.3V_AUX
G_P3.3V
G_P3.3V
SYSVR_TONSEL_M
N
SYSVR_FB1_MN
ANS_SYSVR_BG2_M
N
SYSVR_PGOOD_M
N
SYSVR_ENTRIP2_MN
SYSVR_ENTRIP1_MN
SYSVR_SUSPWR_DRQ_M
N
MCM3_RST#
ANS_SYSVR_BG1_MN
PNS_SYSVR_PHASE1_RC_M
N
SYSVR_SUSPWR_QRQ_MN
SYSVR_FB2_M
N
KBC3_SUSPWR
SYSVR_SUSPWR1_RCQ_M
N
SYSVR_SUSPWR1_QRQ_MN
PNS_SYSVR_PHASE2_M
N
PNS_SYSVR_TG2_M
N
PNS_SYSVR_PHASE1_MN
PNS_SYSVR_TG1_M
N
PNS_SYSVR_BST2_M
N
PNS_SYSVR_BST1_M
N
PNS_SYSVR_BST2_RC_MN
PNS_SYSVR_BST1_RC_MN
SYSVR_SKIPSEL_M
N
SYSVR_VIN_MN
KBC3_USBCHG
KBC3_SUSPWR
PNS_SYSVR_PHASE2_RC_MN