
8-52
R530/R730
8. Block Diagram and Schematic
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
- This Document can not be used without Samsung's authorization -
Samsung
Confidential
Samsung
Confidential
Samsung
Confidential
ELECTRONICS
Misan,Maglayer
MODULE CODE
2
DRAW
SAMSUNG
DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS
3
Misan,Maglayer
350KHz
CHEC
K
LAST EDIT
A
TITL
E
A
RdsOn : 32mohmMAX
OCP : 10.0A@11mohm
(4A)
OCP : 5.6A@32mohm
APPROVAL
350KHz
D
SET : 1.500V
OCP : 6.7A@26mohm
300ohm@TPS5111
7
2
FOR EM
I
DATE
OF
B
AP4232BGM -> New
RE
V
OCP ; (10uA * R837) / Rds(on
)
4
CHIPSET POWER (P1.05V& P1.5V
)
Elna New($0.09)
DEV. STEP
1
COM-22C-015
(1996.6.5
) REV.
3
RdsOn(Typ 8.5mohm / 11mohm)
3
PROPRIETARY INFORMATION THAT IS
PAGE
SAMSUNG ELECTRONICS CO’S PROPERTY
.
D
C
C
EXCEPT AS AUTHORIZED BY SAMSUNG.
59
52
BA41-xxxxxA
October 27, 2009 14:27:43 PM
1.
0
PV
9/23/2008
undefine
d
HJ.KIM
YM.AHN
Jun PARK
SAMSUNG PROPRIETAR
Y
Vout = 0.75 * (1 + (Rtop/Rbot))
PART NO.
Vout = 0.75 * (1 + (Rtop/Rbot))
FOR EMI
Elna New($0.09)
Set : 1.059V
B
THIS DOCUMENT CONTAINS CONFIDENTIA
L
(7A)
4
1
P3.3V
D:/users/mobile24/mentor/Bremen-L/PV/Bremen-L_MAI
N
P1.5V, P1.05V
PWR_MV_Cantiga
Bremen-L
L8
MS-RH1045S-L41-1R8
2703-00015
6
P1.05V
1.8u
H
10
1%
1% 10
R175
1n
F
C201
R174
12
PHAS
E
6
PO
K
10
PVCC
15
THERMAL
2
TO
N
13
UGAT
E
4
VC
C
3
VOUT
50
V
APW7141QAITR
G
1203-006049
14
B
O
O
T
1
EN
5
FB
7
GN
D
9
LGAT
E
11
OCSE
T
8
PGND
5V
U513
50
V
C985
47nF
nostuff
1% 100K
R843
G_P1.05
V
G_P1.05
V
1%
R822
10.7K
R239
2.2
G_P1.05V
44-B3,51-A4
25V
100nF
C246
50
V
1nF
C239
55-B2 52-C4,53-C4
47
nF
C254
50V
22K
R237
1%
G_P1.5
V
G
_P1.5V
100n
F
C250
25
V
G_P1.5
V
G
_P1.5V
50V 0.1nF
C100
2
2.
2
R810
7.6V
5
D1
D2
6
G
4
S
3
20K
R866
1%
7.6V
7
D1
D2
8
G
2
S
1
Q26-2
AP4232BGM-HF
0505-00258
1
4700nF-X5
R
C255
Q26-
1
AP4232BGM-HF
0505-00258
1
8
PHASE
12
POK
6
PVCC
10
THERMAL
15
TON
2
UGATE
13
VCC
4
VOU
T
3
25
V
1203-00604
9
APW7141QAITR
G
U17
5V
BOOT
14
EN
1
FB
5
GND
7
LGATE
9
OCSET
11
PGN
D
G_P1.05V
G_P1.05V
G_P1.5V
1%
R842
4.64K
44-B3,51-A4
52-A4,53-C4
55-B2
1%
R791
11K
2409-00117
6
2.5V
330u
F
EC10
15moh
m
CAN 6T
nostuf
f
1
3
INSTPA
R
SHORT506
75V
D14
MMBD4148
C232
1n
F
50
V
10
R203
1/10
W
10
R841
EC12
68uF
25
V
AL
2402-00114
4
U1
6
INSTPA
R
MMBD414
8
D513
75
V
1
3
nostuf
f
25
V
C208
100n
F
200K
R840
1%
25V
C953
4700nF-X5
R
68uF EC15
R204
10
2409-00117
6
2.5V
330uF EC11
15mohm
CAN 6T
2402-00114
4
AL 25
V
C237
0.1nF
50
V
R207
100K
1%
P5.0
V
1000nF-X5
R
C243
6.3V
R226
10
R817
22K
P5.0V
S2
S3
7
G_P1.05
V
P5.0
V
1%
Q2
2
AON6912L
0505-00252
6
30
V
2
D1
D2
3
4
D3
D4
9
G1
1
G2
8
S1
5
10
S1_D
2
6
C211
4700nF-X5
R
25
V
25V
P3.3
V
C956
100n
F
6.3V
C100
1
1000nF-X5
R
10V
C185
100n
F
4700nF-X5
R
C238
25V
R228
200K
P5.0V
15K
R210
1%
1%
15K
R209
1%
P1.5V
100n
F
C212
10
V
2703-00101
2
MS-RH1048S-L42
L11
2.2uH
VDC
G_P1.5V
G_P1.5
V
PNS_P1.5V_BST_RC_MN
PNS_P1.5V_BST_M
N
P1.5V_TON_MN
P1.5V_VCC_M
N
P1.5V_EN_PSV_MN
P1.5V_PGOOD_MN
P1.5V_TRIP_MN
PNS_P1.5V_PHASE_RC_M
N
KBC3_PWRON
G_P1.05
V
VD
C
PNS_CHSETVR_BST_RC_M
N
PNS_CHSETVR_BST_MN
CHSETVR_TON_M
N
CHSETVR_VCC_M
N
CHSETVR_VFB_M
N
PNS_CHSETVR_PHASE_RC_MN
PNS_CHSETVR_TG_M
N
KBC3_PWRON
CHSETVR_TRIP_M
N
PNS_CHSETVR_PHASE_M
N
ANS_CHSETVR_BG_M
N
CHSETVR_EN_PSV_MN
CHSETVR_POK_M
N
PNS_P1.5V_TG_M
N
PNS_P1.5V_PHASE_M
N
ANS_P1.5V_BG_MN
P1.5V_VFB_M
N