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TO-247-4L Half-Bridge Evaluation Board

User’s Guide

2019 ROHM Co., Ltd.

No. 61UG047E Rev.001

August.2019

Here, the L

TRACE

is the wiring inductance of the main circuit to the bulk (DC link) capacitor, I

MAIN

is the drain current during

MOSFET turn OFF, and f

is the switching frequency of the MOSFET.

On the other hand, the Snubber circuit capacitance, C

SNB

is the energy stored in the inductance and can be calculated using the

equation below:

Here, HV

is the high voltage input, and V

SURGE

is the maximum value of the surge voltage.

Finally, the R

SNB

is obtained by using the following equation:

This

maximizes the effect of absorbing the surge by discharging all the energy absorbed by CSNB during one cycle of the

MOSFET.

Figure 30. Snubber Circuit Effect (SCT3040LR)

𝐶

𝑆𝑁𝐵

𝐿

𝑇𝑅𝐴𝐶𝐸

× 𝐼

𝑀𝐴𝐼𝑁

(𝑉

𝑆𝑈𝑅𝐺𝐸

− 𝐻𝑉

𝑑𝑐

)

𝑅

𝑆𝑁𝐵

−1

𝐶

𝑆𝑁𝐵

× ln[(𝑉

𝑆𝑈𝑅𝐺𝐸

− 𝑉

𝑆𝑁𝐵

)/(𝑉

𝑆𝑈𝑅𝐺𝐸

)]

𝑓

𝑠𝑤

No Snubber

with Snubber

Turn-OFF surge
1135V



1022V

Vgs Negative surge
-3.90V



-1.99V

Rg=3.3Ω

Содержание TO-247-4L

Страница 1: ...he information therein All referenced brands product names service names and trademarks are the property of their respective owners 00000005981LF 000 EOS Power Buy Now We have 45 000 LP502030 PCM NTC...

Страница 2: ...TO 247 4L Half Bridge Evaluation Board Operation Manual...

Страница 3: ...ccidental contact or even bringing your hand close to the board may result in discharge and lead to severe injury or death Therefore DO NOT touch the board with your bare hands or bring them too close...

Страница 4: ...is equipped with a driver circuit an isolated power supply for the driver circuit an over current protection circuit Gate signal protection circuit and so forth In this application note the evaluatio...

Страница 5: ...that if Alarm LED turns ON the board goes into a Latch condition because of the external circuit fault However this board is equipped with a Reset button push the button to clear the Latch condition A...

Страница 6: ...normal operation Power supply for control 12V is applied OFF No power supply for control block HS_Vcc2_ON LS_Vcc2_ON Green ON ON during normal operation Isolated power supply for Gate drive is normall...

Страница 7: ...to adjust this level shifting circuit when changing the bias voltage Resistor value for each bias voltage is shown in Table 3 Furthermore OCP detected point can be adjusted during the negative bias r...

Страница 8: ...OFF the driver IC U102 SCPIN voltage will be directly set high using the Gate OFF signal MOSFET Gate signal can be cut off within 1us after the start up of the SCP However when OCP circuit operates th...

Страница 9: ...User s Guide 2019 ROHM Co Ltd No 61UG047E Rev 001 August 2019 Figure 4 Connector and OCP Adjustment Circuit T2 T1 T3 JP1 CN201 CN202 TP302 TP303 RV301 OCP HS_FAULT LS_FAULT OCP Reset switch LS_FAULT R...

Страница 10: ...ect a digital multi meter between TP303 and TP302 GND is at TP302 side Turn RV301 in the clockwise direction while reading the voltage value VBEMIN in which turns ON the LED for OCP The LED turns ON w...

Страница 11: ...en to reach the voltage which turns ON the Q301 VBE becomes longer Next when the Q301 is turned ON around 2 31us after the OCP circuit started up operation to turn OFF the LS side Gate signal starts w...

Страница 12: ...nt Table 6 Power Supply Pin Description Power Supply Pin Signal Description T1 HVdc High voltage input pin It functions as the Input pin in Buck or Inverter topology but functions as the Output pin in...

Страница 13: ...FET ON when this signal is High Only valid when connector JP1 is set to Dual CLK DP Mode side It is being pulled down with 2 2k resistor when OPEN 07 HS_ALOW I Logic invert signal for IN_H_CLK HS MOSF...

Страница 14: ...ndition or Dual DP CLK Mode that allows ON OFF driving individually is possible The selection can be done by using the JP201 jumper When Single CLK Mode is selected only IN_CLK signal is valid When Du...

Страница 15: ...trol IC BD7F200EFJ is used for this Flyback power supply In addition transformers to output positive negative drive voltage for each LS and HS are included On board power supply layout is shown in Fig...

Страница 16: ...oltage 47k 1 8W RB168VAM150TR 150V 1A 10uF 50V 3216 4 7uF 35V 2012 R65 15k 22uF 50V 3216 0 150 3 4W 10uF 50V 3216 4 7uF 35V 2012 TFZVTR2 0B 20mA 0 5W 150 3 4W 1 5k R7 D58 4 7k 1 8W R57 C61 ZD51 R68 R1...

Страница 17: ...negative output of the transformers is around 4 3V thus the adjustment can only be done within 0V 4 3V range Furthermore the negative voltage also can be supplied directly from the transformers by sh...

Страница 18: ...MOSFET driver IC BM6101FV C output signal through the Gate resistors It is better to shorten the wiring of the driver circuit pattern as it s inductance affects the surge voltage characteristics of th...

Страница 19: ...d for turn ON Default setting for this board is adjusted by R74 R174 hence the same speed for turn ON and OFF Vsw GND1 NC INB FILTERS VCC1 FLT INA ENA TEST GND1 VEE2 OUT2 OUT1 VTSIN VCC2 VREG GND2 SCP...

Страница 20: ...F Q51 C59 CX51 D55 D56 1000pF C67 4 7k R56 removed Turn ON Turn OFF Setting Gate Drive Circuit Resistor and Diode Mount No Mount Gate Resistor Setting Value HS D51 R70 R71 R72 D52 R73 R74 R75 D151 R17...

Страница 21: ...0 1uF Q51 C59 CX51 D55 D56 1000pF C67 4 7k R56 R70 R72 GND1 NC INB FILTERS VCC1 FLT INA ENA TEST GND1 VEE2 OUT2 OUT1 VTSIN VCC2 VREG GND2 SCPIN PROUT VEE2 BM6101FV CE2 47k 0 1uF 0 1uF U2 Q51 C59 R55 R...

Страница 22: ...is 470 setting the dead time to be around 300ns The allowable minimum setting for this resistor is 220 giving a dead time of around 270ns Resistors R221 and R222 must be set with the same value and th...

Страница 23: ...is evaluation board to allow the current flowing to each device to be easily measured using a Rogowski current probe It is possible to measure the current at the Drain pin for the HS and at the Power...

Страница 24: ...diameters the suitable diameter for this evaluation board is shown in Figure 1 25mm 30mm for the circle diameter and less than 3mm for the wire diameter The dimension of the through holes is shown in...

Страница 25: ...R77 resistor R177 for LS to avoid the merging of Power Source pin and return line when 4L DUT is mounted R77 R177 are not mounted on this board as default mount these resistors to perform the evaluat...

Страница 26: ...lows the using of a single heatsink for the cooling purpose even for the commutation devices An insulator will be required under each device The installation image is shown in Figure 20 Figure 20 Heat...

Страница 27: ...7E Rev 001 August 2019 Figure 22 Heat Sink Installation Heatsink DUT Inductor Input Bulk Capacitor Output Bulk Capacitor PWM Clock PCB Vcc Vin 300V Vout 600V Figure 23 Device Surface Temperature SCT30...

Страница 28: ...cc pin CN202 and high voltage HVdc power supply to HVdc pin T1 Preliminary setting has to be done for JP1 only JP1 setting Set to Dual DP side Directly connect the ENABLE signal to SGND Operation proc...

Страница 29: ...eling diode temperature may increase when performing the test repeatedly 12 2 LS MOSFET Double pulse Test The connection of the double pulse test for LS MOSFET is shown in Figure 25 Figure 25 LS Doubl...

Страница 30: ...12V power supply Set the switching frequency duty ratio at the pulse generator then input the CLK signal Input the HVdc power supply Adjust the output current at the electronic load equipment At CCM...

Страница 31: ...tching operation is at HS when AC output is side at LS when AC output is side The sine wave voltage is obtained by controlling the CLK signal Duty Preliminary setting has to be done for JP1 only JP1 s...

Страница 32: ...asically it is not necessary to add an input capacitor externally However if the oscillating frequency is low it is recommended to add an appropriate value of external input capacitor In that case ens...

Страница 33: ...oltage is equal to the input voltage Therefore please make sure that the electronic load equipment has an adequate rated voltage etc As the STP Shoot Through Prevention is used to prevent the Simultan...

Страница 34: ...the high voltage input HVdc thus this circuit is suitable for high frequency switching circuit However the pattern layout is difficult therefore the board is recommended to have at least 4 layers All...

Страница 35: ...rcuit capacitance CSNB is the energy stored in the inductance and can be calculated using the equation below Here HVdc is the high voltage input and VSURGE is the maximum value of the surge voltage Fi...

Страница 36: ...se the other MOSFET turns ON so called self turn ON when the Vgs exceeded the threshold voltage The Vgs rising can be reduced by clamping it with Q53 impedance smaller than Gate drive resistor R74 Thi...

Страница 37: ...T GND1 VEE2 OUT2 OUT1 VTSIN VCC2 VREG GND2 SCPIN PROUT VEE2 BM6101FV 47k 0 1uF 0 1uF U2 Q51 C59 R55 R70 R72 100 R54 C58 D51 R74 D52 Q53 R71 R73 R75 0 R78 VEE2 Vcc2 C67 R56 Q52 R77 0 ZD52 ZD53 D56 D55...

Страница 38: ...gh side Vds and the last waveform is the high side Id From red line waveform we can notice that there is not a single Vgs protection circuit being applied as the self turn on during turn on and the ne...

Страница 39: ...om the waveforms we can see that the self turn on can be prevented by adding the Cgs However we also understand that the Cgs does not give a significant effect on the negative surge at turn off Furthe...

Страница 40: ...different Cgs capacitances With protection circuits Finally the measured waveforms when all the Vgs protection circuits are applied are shown in Figure 35 All the abnormalities during turn on and turn...

Страница 41: ...ally at turn on the commutation side current decreases Vf of the body diode decreases and Coss and Crss are charged Since this charged current is flowing from drain pin to gate pin positive surge shou...

Страница 42: ...hnical information The Products specified in this document are not designed to be radiation tolerant For use of our Products in applications requiring a high degree of reliability as exemplified below...

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