5G Module Series
RM510Q-GL Hardware Design
RM510Q-GL_Hardware_Design 79 / 88
Table 49: (U)SIM 3.0 V I/O Requirements
6.4. Electrostatic Discharge
The module is not protected against electrostatic discharge (ESD) in general. Consequently, it is subject
to ESD handling precautions that typically apply to ESD sensitive components. Proper ESD handling and
packaging procedures must be applied throughout the processing, handling and operation of any
application that incorporates the module.
Table 50: Electrostatic Discharge Characteristics (Temperature: 25 ºC, Humidity: 40 %)
6.5. Thermal Dissipation
RM510Q-GL are designed to work over an extended temperature range. To achieve a maximum
V
IL
Input low voltage
-0.3
0.2 × USIM_VDD V
V
OH
Output high voltage
0.8 × USIM_VDD
USIM_VDD
V
V
OL
Output low voltage
0
0.4
V
Parameter
Description
Min.
Max.
Unit
USIM_VDD
Power supply
2.7
3.05
V
V
IH
Input high voltage
0.7 × USIM_VDD
US 0.3 V
V
IL
Input low voltage
-0.3
0.2 × USIM_VDD V
V
OH
Output high voltage
0.8 × USIM_VDD
USIM_VDD
V
V
OL
Output low voltage
0
0.4
V
Tested Interfaces
Contact Discharge
Air Discharge
Unit
VCC, GND
±5
±10
kV
Antenna Interfaces
±4
±8
kV
Other Interfaces
±0.5
±1
kV