System
Memory
©
PHYTEC Messtechnik GmbH 2010 L-750e_1
39
7.2
NAND Flash Memory (U13)
Use of Flash as non-volatile memory on the phyCARD-M provides an
easily reprogrammable means of code storage. The following Flash
devices can be used on the phyCARD-M:
Manufacturer
NAND Flash P/N
Density
(MByte)
Samsung K9F1G08UOC 128
Table 10:
Compatible NAND Flash devices
Additionally, any parts that are footprint (48-TSOP) and functionally
compatible with the NAND Flash devices listed above may also be
used with the phyCARD-M.
These Flash devices are programmable with 3.3 V. No dedicated
programming voltage is required.
As of the printing of this manual these NAND Flash devices generally
have a life expectancy of at least 100,000 erase/program cycles and a
data retention rate of 10 years.
The NAND Flash memory is connected to the NAND Flash Controller
(NFC).
7.3
I²C EEPROM (U6)
The phyCARD-M is populated with an ST 24W32C
1
non-volatile
4KByte EEPROM with an I²C interface at U6. This memory can be
used to store configuration data or other general purpose data. This
device is accessed through I²C port 1 on the i.MX35. The control
registers for I²C port 1 are mapped between addresses 0x43F8 0000
and 0x43F8 3FFF. Please see the
i.MX35 Reference
Manual for
detailed information on the registers.
1
:
See the manufacturer’s data sheet for interfacing and operation.
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