Peak Atlas DCA Pro
User Guide
June 2019
–
Rev 1.7
Page 42
Appendix C
–
Component Testing Specifications
Parameter
Min
Nom
Max
Units
Notes
Bipolar Transistors
Measurable current gain (hFE) range
2
32000
1
hFE accuracy (hFE<2000)
±3% ±5 hFE
1,7
hFE test voltage (VCEO)
3.0
9.0
V
1
hFE collector test current
4.75
5.00
5.25
mA
1
Base current for VBE measurement
4.75
5.00
5.25
mA
VBE accuracy
±1.2% ±15mV
7
VBE resolution
3
7
15
mV
VBE for Darlington identification
0.95
1.00
1.80
V
2
VBE for Darlington (shunted types)
0.75
0.80
1.80
V
3
VBE threshold for Ge/Si identification
0.50
V
If ICEO>10
μ
A
0.55
V
9
Acceptable VBE
1.80
Base-emitter shunt threshold
50
60
70
k
Ω
Acceptable leakage (ICEO) for Si
0.0
0.2
mA
5
Acceptable leakage (ICEO) for Ge
0.0
2.4
mA
5
Leakage (ICEO) accuracy
±1.7% ±13.1
μ
A
VCE(SAT) collector test current
4.75
5.00
5.25
mA
VCE(SAT) base test current
0.95
1.00
1.05
mA
VCE(SAT) accuracy
±1.2% ±15mV
IGBTs
Enhancement mode VGE(ON) range
0.0
8.0
V
4
Depletion mode VGE(ON) range
-5.0
0.0
V
4
VGE(ON) accuracy
±1.2% ±19mV
4
Collector current at VGE(ON)
4.75
5.00
5.25
mA
Collector-emitter voltage at VGE(ON)
3.5
9.0
V
4
Acceptable gate-emitter resistance
18.0
k
Ω
Collector saturation threshold for IGBT
0.35
0.4
0.45
V
8
VCE(SAT) collector test current
4.75
5.00
5.25
mA
VCE(SAT) gate-emitter test voltage
7.80
8.00
8.20
V
10
VCE(SAT) accuracy
±1.2% ±15mV
Transconductance range (gfe)
99
mA/V
Transconductance accuracy
±5% ±2mA/V
±10% ±5mA/V
MOSFETs
Enhancement mode VGS(ON) range
0.0
8.0
V
4
Depletion mode VGS(ON) range
-5.0
0.0
V
4
VGS(ON) accuracy
±1.2% ±19mV
4
Drain current at VGS(ON)
4.75
5.00
5.25
mA
Drain-source voltage at VGS(ON)
3.5
9.0
V
Drain current at VGS(OFF)
2.5
5.00
10
μ
A
Acceptable gate-source resistance
3.5
k
Ω
RDS(ON) drain test current
4.75
5.00
5.25
mA
RDS(ON) gate-source test voltage
7.80
8.00
8.20
V
10
RDS(ON) accuracy
±2% ±2
Ω
RDS(ON) resolution
1
2
Ω
Transconductance range (gm)
99
mA/V
Transconductance accuracy
±5% ±2mA/V
±10% ±5mA/V
CS32659.750
