Panasonic Transistors 2SB1218G, Технические характеристики

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2SB1218G
3 SJC00352AED
This product complies with the RoHS Directive (EU 2002/95/EC).
h Parameter

V
CE
NF

I
E
NF

I
E
h Parameter

I
E
0.01 0.1 1 10
0
6
5
4
3
2
1
V
CB
= −
5 V
f
=
1 kHz
R
g
=
2 k
Ω
T
a
=
25
°
C
Noise figure NF
(dB
)
Emitter current I
E
(mA)
0.1 1 10
0
20
16
12
8
4
V
CB
= −
5 V
R
g
=
50 k
Ω
T
a
=
25
°
C
f
=
100 Hz
10 kHz
1 kHz
Noise figure NF
(dB
)
Emitter current I
E
(mA)
0.1 1 10
1
100
10
V
CE
= −
5 V
f
=
270 Hz
T
a
=
25
°
C
h
fe
h
oe
(
µ
S)
h
ie
(k
Ω
)
h
re
(
×
10
−
4
)
h Parameter
Emitter current I
E
(mA)
−
1
−
10
−
100
1
100
10
I
E
=
2 mA
f
=
270 Hz
T
a
=
25
°
C
h
fe
h
oe
(
µ
S)
h
ie
(k
Ω
)
h
re
(
×
10
−
4
)
h Parameter
Collector-emitter voltage V
CE
(V)