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NCP1608BOOSTGEVB

http://onsemi.com

12

Figure 18. Block Diagram of the Propagation Delay Components

Ct

+

PWM

Control

Driver

Ct

R

CT

V

DD

I

charge

DRV

V

Control

Ct

(offset)

V

Ct(off)

DRV

R

DRV

R

sense

V

gate

I

switch

There is a delay (t

delay

) from when V

Ct(off)

 is reached to

when the MOSFET completely turns off. t

delay

 is caused by

the propagation delay of the PWM comparator (t

PWM

) and

the time for the gate voltage of the MOSFET to decrease to
zero (t

gate

). The delays are illustrated in Figure 19.

Figure 19. Turn Off Propagation Delays

Ct

t

PWM

t

gate

t

delay

V

Ct(off)

V

gate

I

switch

The total delay is calculated using Equation 25:

t

delay

+

t

PWM

)

t

gate

(eq. 25)

t

delay

 increases the effective on time of the MOSFET.

If a resistor (R

CT

) is connected in series with the Ct

capacitor, then the total on time reduction is calculated using
Equation 26:

D

t

on

+

Ct

@

D

V

RCT

D

I

RCT

+

Ct

@

R

CT

(eq. 26)

The value of R

CT

 to compensate for the propagation delay

is calculated using Equation 27:

R

CT

+

t

delay

Ct

(eq. 27)

The NCP1608 datasheet specifies the maximum t

PWM

 as

130 ns. t

gate

 is a dependent on the gate charge of the

MOSFET and R

DRV

. For this demo board, the gate delay is

measured as 230 ns.

R

CT

+

360 n

1 n

+

360

W

A value of R

CT

 = 365 

W

 compensates for the propagation

delays. Figure 20 shows the decrease of THD at Vac

HL

 and

low output power by compensating for the propagation delay.

R

CT

 = 0 

W

25

30

35

40

45

50

0

10

20

30

40

50

THD (%)

Figure 20. Low Output Power THD Reduction with
R

CT

 (V

in

 = 265 Vac 50 Hz, R

CTUP

 = open, Ct = 1 nF)

P

out

 (W)

R

CT

 = 365 

W

DRV Pulse Skipping Begins

Both THD reduction techniques can be combined to

decrease the THD for the entire output power range.
Figure 21 shows the decreased THD at the maximum input
voltage

 

across the output power range by decreasing zero

crossing distortion and by compensating for the propagation
delay.

R

CTUP

 = open

R

CT

 = 0 

W

 Ct = 1 nF

25

35

45

55

85

95

0

10

20

30

40

50

THD (%)

Figure 21. THD Reduction with R

CTUP

 and R

CT

(V

in

 = 265 Vac 50 Hz)

P

out

 (W)

65

75

DRV Pulse Skipping Begins

R

CTUP

 = 1.5 M

W

R

CT

 = 365 

W

 Ct = 1.22 nF

Содержание NCP1608BOOSTGEVB

Страница 1: ...es the stress on the power delivery infrastructure Government regulations and utility requirements mandate control over line current harmonic content Active PFC circuits are the most popular method to...

Страница 2: ...gh precision error amplifier and low standby current consumption For detailed information on the operation of the NCP1608 please refer to NCP1608 D at www onsemi com A CrM boost pre converter featurin...

Страница 3: ...d Understanding of CrM Boost PFC Circuits Available at www onsemi com AND8123 Power Factor Correction Stages Operating in Critical Conduction Mode AND8016 Design of Power Factor Correction Circuits Us...

Страница 4: ...the ZCD Turns Ratio To activate the ZCD detector of the NCP1608 the ZCD turns ratio is sized such that at least VZCD ARM 1 55 V maximum is applied to the ZCD pin during all operating conditions see Fi...

Страница 5: ...voltage signal is delayed before it is applied to the FB pin due to the time constant set by Rout1 and the FB pin capacitance Rout1 must not be sized too large or this delay may cause overshoots of th...

Страница 6: ...ened UVP Fault Ct offset VEAH VUVP VREF VFB VControl Vout Vout VCC VCC off VCC on DESIGN STEP 6 Size the Power Components The power components are sized such that there is sufficient margin to sustain...

Страница 7: ...If CVcc is selected as a 47 mF capacitor and Rstart is selected as 660 kW tstartup is equal to tstartup 47 m 12 2 85 660 k 24 m 3 57 s Once VCC reaches VCC on the internal references and logic of the...

Страница 8: ...t and recovery 2 Startup Bypass Rectifier A rectifier is connected from Vin to Vout Figure 10 This bypasses the inductor and diverts the startup current directly to Cbulk Cbulk is charged to the peak...

Страница 9: ...ditions The measurement setup using a network analyzer is shown in Figure 12 Ch A High Voltage 450 V Isolation Probe Ch B High Voltage 450 V Isolation Probe Figure 12 Gain Phase Measurement Setup for...

Страница 10: ...tor from Vin to Ct as shown in Figure 14 The resistor current ICTUP is proportional to the instantaneous line voltage and is summed with Icharge to increase the charging current of Ct ICTUP is maximum...

Страница 11: ...e is disabled and Vout decreases 4 As Vout decreases VControl increases 5 The sequence repeats Figure 17 depicts the sequence Figure 17 Required On Time Less Than the Minimum On Time DRV Ct offset VCo...

Страница 12: ...ation delay is calculated using Equation 27 RCT tdelay Ct eq 27 The NCP1608 datasheet specifies the maximum tPWM as 130 ns tgate is a dependent on the gate charge of the MOSFET and RDRV For this demo...

Страница 13: ...nd efficiency Figure 26 All measurements are performed with the following conditions After the board is operated at full load and minimum line input voltage for 30 minutes At an ambient temperature of...

Страница 14: ...e 25 PF vs Input Voltage Figure 26 Efficiency vs Input Voltage Vin Vac Vin Vac 290 255 220 185 150 115 80 0 90 0 91 0 92 0 94 0 96 0 97 0 98 1 00 290 255 220 185 150 115 80 90 92 94 96 98 100 THD HARM...

Страница 15: ...r with no load as shown in Figure 28 The NCP1608 detects an OVP fault when Vout reaches 421 V and restarts when Vout decreases to 410 V Vin 50V div Iin 1A div Vout 10V div ac coupled Figure 27 Input C...

Страница 16: ...aximum input voltage the crossover frequency is 10 Hz and the phase margin is 53 Figure 29 Frequency Response Vin 85 Vac 60 Hz Iout 250 mA 1 10 100 100 80 60 40 20 0 20 40 60 80 100 GAIN dB 150 120 90...

Страница 17: ...shown in Figure 31 If J1 is removed during operation the drive is disabled as shown in Figure 32 J1 is for FPP evaluation purposes only and should not be included in manufactured systems Figure 31 Sta...

Страница 18: ...following components as close as possible to the NCP1608 a Ct capacitor b VCC decoupling capacitor c Control pin compensation components 2 Minimize trace length especially for high current loops 3 Use...

Страница 19: ...ramic SMD 50 V 0 1 mF 10 1206 Yageo CC1206KRX7R9BB104 Yes D1 1 Diode Switching 100 V SOD123 ON Semiconductor MMSD4148T1G No DAUX 1 Diode Zener 18 V SOD123 ON Semiconductor MMSZ4705T1G No DBOOST 1 Diod...

Страница 20: ...r SMD 0 W 1206 Vishay CRCW12060000Z0EA Yes RCTUP1 RCTUP2 2 Resistor 0 25 W Axial 750 kW 5 Axial Yageo CFR 25JB 750K Yes RDRV 1 Resistor SMD 10 W 1 1206 Vishay CRCW120610R0FKEA Yes RO1A RO1B 2 Resistor...

Страница 21: ...NCP1608BOOSTGEVB http onsemi com 21 LAYOUT Figure 34 Top View of the Layout Figure 35 Bottom View of the Layout...

Страница 22: ...then check the output voltage VOUT using the corresponding multimeter Verify it is within the limits of Table 5 11 Measure power factor PF and input power PIN using the power analyzer 12 Measure the p...

Страница 23: ...NCP1608BOOSTGEVB http onsemi com 23 Figure 36 Test Setup...

Страница 24: ...inductor value Icharge and VCt MAX are shown in the specifica tion table Inductor Turns to ZCD Turns Ratio NB NZCD v Vout 2 VacHL VZCD ARM Where VacHL is the maximum line input voltage VZCD ARM is sho...

Страница 25: ...Typicals must be validated for each customer application by customer s technical experts SCILLC does not convey any license under its patent rights nor the rights of others SCILLC products are not de...

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