© 2013 Fairchild Semiconductor Corporation
17
FEBFDD850N10LD_CS001
• Rev. 1.0.0
9.3.
Loss Analysis
Test Conditions
Connect the power resistor (85
Ω
) to the CON2 and measure the output voltage and
current on the BoostPak (FDD850N10LD) after 30 minutes aging.
Table 7.
Test Results
Input
Voltage
(V)
MOSFET
Diode
Total
P
D
(W)
P
ON
(W)
P
OFF
(W)
P
COND
(W)
P
TOT
(W)
P
ON
(W)
P
OFF
(W)
P
COND
(W)
P
TOT
(W)
20.4
0.17
0.11
0.14
0.42
0.02
0.38
0.53
0.93
1.34
24
0.15
0.09
0.09
0.34
0.02
0.37
0.52
0.91
1.24
27.6
0.13
0.09
0.07
0.28
0.02
0.36
0.52
0.90
1.18
Figure 21.
Loss Analysis for V
IN
=24 V
Figure 22.
Loss Distribution for V
IN
=24 V
Eon_M
45%
Eoff_M
28%
Econd_M
27%
Power Loss of MOSFET
Eon_D
2%
Eoff_D
41%
Econd_D
57%
Power Loss of Diode
Eon_M
12%
Eoff_M
8%
Econd_M
7%
Eon_D
2%
Eoff_D
30%
Econd_D
41%
Total Power Loss
0.00
0.20
0.40
0.60
0.80
1.00
MOSFET
Diode
Conduction loss
0.09
0.52
Turn off loss
0.09
0.37
Turn on loss
0.15
0.02
P
ow
e
r
Los
s
[W
]
Power distribution
