ON Semiconductor Fairchild FDD850N10LD, Руководство пользователя

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© 2013 Fairchild Semiconductor Corporation 4 FEBFDD850N10LD_CS001
• Rev. 1.0.0
2. Evaluation Board Specifications
All data was measured under the condition, T
A
=25°C.
Table 1.
Summary of Features and Performance
Description Symbol Value Comments
Input Voltage
V
IN, MIN.
20.4 V
V
IN, TYP.
24.0 V
V
IN, MAX.
27.6 V
Switching Frequency f
sw
200 kHz R35 (k
Ω)=15000/f
sw
(kHz)
Output Voltage / Current
V
OUT
55 V
I
OUT
0.64 A
Output Power P
OUT
35 W
Efficiency > 92%
Temperature
T
BoostPak
T
Inductor
T
MOSFET
< 65°C
Initial Application LED Backlight