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FEBFDD850N10LD_CS001

• Rev. 1.0.0

Inductor Specifications



Manufacturer: DONGYANG TELECOM CO., LTD.

HEAD OFFICE & FACTORY

942-5, Dohwa-Dong, Nam-gu,
Incheon, Korea

TEL : 032-584-0100
FAX : 032-584-0101

China Factory

No.28 Feng Huang Street,
Weifang Shandong, CHINA

TEL : 86-536-790-2048
FAX : 86-536-760-2046

Thailand Factory

3/3 Moo. 1 T. Napradoo
A.Phantong Chonburi

TEL : 66-81-933-5740
FAX : 66-38-451-573



Part No : DYCP1580-470

Figure 8. Inductor Specification & Construction

(unit : mm)

Top view

Front view

Bottom view

Figure 9.

Dimension Specification

Table 2.

Winding Specifications

No.

Winding

Pin (S



Wire

Turns

Winding Method



0.35

Φ * 2

21.5 ± 2.0

Solenoid Winding



Table 3.

Electrical Characteristics

Pin

Specification

Inductance

1, 2

– 3, 4

47.0 µH

Resistance

0.073

Maximum Current

5.0 A

S : 1, 2

F : 3, 4

: WINDING START POINT

Содержание Fairchild FDD850N10LD

Страница 1: ...y ON Semiconductor Typical parameters which may be provided in ON Semiconductor data sheets and or specifications can and do vary in different applications and actual performance may vary over time Al...

Страница 2: ...D_CS001 Rev 1 0 0 User Guide for FEBFDD850N10LD_CS001 35 W Boost Converter for LED Drive using BoostPak Featured Fairchild Product FDD850N10LD Direct questions or comments about this evaluation board...

Страница 3: ...valuation Board Specifications 4 3 Photographs 5 4 Printed Circuit Board 6 5 Schematic 7 6 Bill of Materials 8 7 Inductor Specifications 10 8 Test Conditions Test Equipment 11 9 Performance of Evaluat...

Страница 4: ...iption The N channel MOSFET and NP diode are combined in one 5 lead D Pak package produced using Fairchild Semiconductor s PowerTrench process tailored to minimize on state resistance while maintainin...

Страница 5: ...25 C Table 1 Summary of Features and Performance Description Symbol Value Comments Input Voltage VIN MIN 20 4 V VIN TYP 24 0 V VIN MAX 27 6 V Switching Frequency fsw 200 kHz R35 k 15000 fsw kHz Output...

Страница 6: ...2013 Fairchild Semiconductor Corporation 5 FEBFDD850N10LD_CS001 Rev 1 0 0 3 Photographs Figure 3 Top View 114 x 76 mm 2 Figure 4 Bottom View 114 x 76 mm 2...

Страница 7: ...2013 Fairchild Semiconductor Corporation 6 FEBFDD850N10LD_CS001 Rev 1 0 0 4 Printed Circuit Board Figure 5 Top Side Figure 6 Bottom Side 114 3mm 76 2mm 114 3mm 63 5mm 114 3mm...

Страница 8: ...2013 Fairchild Semiconductor Corporation 7 FEBFDD850N10LD_CS001 Rev 1 0 0 5 Schematic Figure 7 Evaluation Board Schematic...

Страница 9: ...M188R71E221KA01 1 220 pF 25 V SMD Capacitor 1608 Murata 13 C14 NXQ100VB100MTPRB 1 100 F 100 V Electrolytic Capacitor Samyoung 14 C20 C21 C23 C26 C28 C29 C30 C31 GRM188R71E105KA12 8 1 F 25 V SMD Capaci...

Страница 10: ...m 32 R45 R46 R47 R48 R49 MCR10ERTJ7R5 5 7 5 SMD Resistor 2012 Rhom 33 R57 MCR03ERTF5102 1 51 k SMD Resistor 1608 Rhom 34 R59 R60 MCR03ERTF5101 2 5 1 k SMD Resistor 1608 Rhom 35 R61 R62 R63 R64 R65 R66...

Страница 11: ...536 760 2046 Thailand Factory 3 3 Moo 1 T Napradoo A Phantong Chonburi TEL 66 81 933 5740 FAX 66 38 451 573 Part No DYCP1580 470 Figure 8 Inductor Specification Construction unit mm Top view Front vi...

Страница 12: ...est Equipments DC Power Supply H 3005D by FinePower Power Analyzer PM3000A by Voltech Load 100 W 100 J Adjustable Resistor Oscilloscope DPO7104 by Tectronix Passive voltage probe P6139 Differential hi...

Страница 13: ...D under the specified conditions below Table 5 Test Result Input Voltage V Remarks 20 4 24 27 6 Power On MOSFET Vds V 62 4 62 4 63 2 Diode Vca V 69 6 69 6 68 8 Inductor IL_max A 2 56 2 36 2 20 IL_min...

Страница 14: ...miconductor Corporation 13 FEBFDD850N10LD_CS001 Rev 1 0 0 9 1 1 Power On Waveforms C1 Vgs 5 V div C2 Vds 20 V div C3 IL 1 A div C4 Vka 20 V div Time 20 ms div Figure 11 VIN 20 4 V Figure 12 VIN 24 V F...

Страница 15: ...Semiconductor Corporation 14 FEBFDD850N10LD_CS001 Rev 1 0 0 9 1 2 Normal Waveforms C1 Vgs 5 V div C2 Vds 20 V div C3 IL 1 A div C4 Vka 20 V div Time 10 s div Figure 14 VIN 20 4 V Figure 15 VIN 24 V Fi...

Страница 16: ...miconductor Corporation 15 FEBFDD850N10LD_CS001 Rev 1 0 0 9 1 3 Power Off Waveforms C1 Vgs 5 V div C2 Vds 20 V div C3 IL 1 A div C4 Vka 20 V div Time 50 ms div Figure 17 VIN 20 4 V Figure 18 VIN 24 V...

Страница 17: ...on the BoostPak FDD850N10LD after 30 minutes aging Table 6 Test Results Input Voltage V Pout 35 W Pout 45 W Remarks VOUT V IOUT A VOUT V IOUT A 20 4 55 39 0 639 64 83 0 640 24 0 55 42 0 639 64 97 0 6...

Страница 18: ...W PTOT W 20 4 0 17 0 11 0 14 0 42 0 02 0 38 0 53 0 93 1 34 24 0 15 0 09 0 09 0 34 0 02 0 37 0 52 0 91 1 24 27 6 0 13 0 09 0 07 0 28 0 02 0 36 0 52 0 90 1 18 Figure 21 Loss Analysis for VIN 24 V Figure...

Страница 19: ...Vgs 5 V div C2 Vds 20 V div C3 Id 1 A div 4 Period Waveforms Time 2 s div Conduction Waveforms Time 500 ns div Turn On Waveforms Time 50 ns div Turn Off Waveforms Time 50 ns div Figure 24 MOSFET Wavef...

Страница 20: ...850N10LD_CS001 Rev 1 0 0 Waveforms C1 Vgs 5V div C4 Vak 20V div M2 Ia 1A div 4 Period Waveforms Time 2 s div Conduction Waveforms Time 500 ns div Turn On Waveforms Time 50 ns div Turn Off Waveforms Ti...

Страница 21: ...W Input Voltage Input Power Output Power Efficiency Remark 20 4 V 37 75 W 35 39 W 93 75 24 0 V 37 54 W 35 42 W 94 36 27 6 V 37 38 W 35 43 W 94 78 Table 9 Test Results of VOUT 65 V 45 W Input Voltage I...

Страница 22: ...VOUT 55 V 35 W VIN 20 4 V VIN 24 V VIN 27 6 V Remark BoostPak Q11 66 9 C 61 5 C 59 3 C PKG Top Inductor 63 7 C 59 6 C 56 6 C R8 R14 57 6 C 52 8 C 49 8 C MOSFET Q12 50 8 C 50 0 C 52 1 C R45 R49 58 9 C...

Страница 23: ...850N10LD_CS001 Rev 1 0 0 9 6 EMI Test Conditions Frequency Sub Range 30 MHz 1000 MHz Load is five strings of LEDs Figure 29 Radiated Emissions VIN 24 V 30 1000 50 100 500 10 60 20 30 40 50 Frequency L...

Страница 24: ...cant injury to the user 2 A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device o...

Страница 25: ...the rights of others ON Semiconductor products are not designed intended or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices wit...

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