256 KByte Flash Module (S12XFTMR256K1V1)
S12XS Family Reference Manual, Rev. 1.13
508
Freescale Semiconductor
CAUTION
A Flash word or phrase must be in the erased state before being
programmed. Cumulative programming of bits within a Flash word or
phrase is not allowed.
The Flash memory may be read as bytes, aligned words, or misaligned words. Read access time is one bus
cycle for bytes and aligned words, and two bus cycles for misaligned words. For Flash memory, an erased
bit reads 1 and a programmed bit reads 0.
It is not possible to read from a Flash block while any command is executing on that specific Flash block.
It is possible to read from a Flash block while a command is executing on a different Flash block.
Both P-Flash and D-Flash memories are implemented with Error Correction Codes (ECC) that can resolve
single bit faults and detect double bit faults. For P-Flash memory, the ECC implementation requires that
programming be done on an aligned 8 byte basis (a Flash phrase). Since P-Flash memory is always read
by phrase, only one single bit fault in the phrase containing the byte or word accessed will be corrected.
18.1.1
Glossary
Command Write Sequence
— An MCU instruction sequence to execute built-in algorithms (including
program and erase) on the Flash memory.
D-Flash Memory
— The D-Flash memory constitutes the nonvolatile memory store for data.
D-Flash Sector
— The D-Flash sector is the smallest portion of the D-Flash memory that can be erased.
The D-Flash sector consists of four 64 byte rows for a total of 256 bytes.
NVM Command Mode
— An NVM mode using the CPU to setup the FCCOB register to pass parameters
required for Flash command execution.
Phrase
— An aligned group of four 16-bit words within the P-Flash memory. Each phrase includes eight
ECC bits for single bit fault correction and double bit fault detection within the phrase.
P-Flash Memory
— The P-Flash memory constitutes the main nonvolatile memory store for applications.
P-Flash Sector
— The P-Flash sector is the smallest portion of the P-Flash memory that can be erased.
Each P-Flash sector contains 1024 bytes.
Program IFR
— Nonvolatile information register located in the P-Flash block that contains the Device
ID, Version ID, and the Program Once field. The Program IFR is visible in the global memory map by
setting the PGMIFRON bit in the MMCCTL1 register.
18.1.2
Features
18.1.2.1
P-Flash Features
•
256 Kbytes of P-Flash memory composed of one 256 Kbyte Flash block divided into 256 sectors
of 1024 bytes
•
Single bit fault correction and double bit fault detection within a 64-bit phrase during read
operations
Содержание MC9S12XS128
Страница 4: ...S12XS Family Reference Manual Rev 1 13 4 Freescale Semiconductor ...
Страница 58: ...Device Overview S12XS Family S12XS Family Reference Manual Rev 1 13 58 Freescale Semiconductor ...
Страница 150: ...Memory Mapping Control S12XMMCV4 S12XS Family Reference Manual Rev 1 13 150 Freescale Semiconductor ...
Страница 168: ...Interrupt S12XINTV2 S12XS Family Reference Manual Rev 1 13 168 Freescale Semiconductor ...
Страница 194: ...Background Debug Module S12XBDMV2 S12XS Family Reference Manual Rev 1 13 194 Freescale Semiconductor ...
Страница 364: ...Periodic Interrupt Timer S12PIT24B4CV1 S12XS Family Reference Manual Rev 1 13 364 Freescale Semiconductor ...
Страница 396: ...Pulse Width Modulator S12PWM8B8CV1 S12XS Family Reference Manual Rev 1 13 396 Freescale Semiconductor ...
Страница 506: ...Voltage Regulator S12VREGL3V3V1 S12XS Family Reference Manual Rev 1 13 506 Freescale Semiconductor ...
Страница 736: ...Ordering Information S12XS Family Reference Manual Rev 1 13 736 Freescale Semiconductor ...
Страница 737: ......