
DR
AFT
DR
AFT
DRAFT
DR
D
RAFT
DRAFT
DRA
FT DRAF
D
RAFT DRAFT DRAFT DRAFT DRAFT D
DRAFT
D
RAFT DRA
FT DRAFT DRAFT DRAFT DRA
LPC2917_19_1
© NXP B.V. 2007. All rights reserved.
Preliminary data sheet
Rev. 1.01 — 15 November 2007
57 of 68
NXP Semiconductors
LPC2917/19
ARM9 microcontroller with CAN and LIN
[1]
All parameters are guaranteed over the virtual junction temperature range by design. Pre-testing is performed at T
amb
= 125
°
C ambient
temperature on wafer level. Cased products are tested at T
amb
= 25
°
C (final testing). Both pre-testing and final testing use correlated
test conditions to cover the specified temperature and power supply voltage range.
[2]
This parameter is not part of production testing or final testing, hence only a typical value is stated.
[3]
Oscillator start-up time depends on the quality of the crystal. For most crystals it takes about 1000 clock pulses until the clock is fully
stable.
[4]
Duty cycle clock should be as close as possible to 50%.
t
a(W)int
Internal write-access
time.
-
-
24.9
ns
UART
f
UART
UART frequency.
1
⁄
65024
f
clk(uart)
-
1
⁄
2
f
clk(uart)
MHz
SPI
f
SPI
SPI operating
frequency.
Master operation.
1
⁄
65024
f
clk(spi)
-
1
⁄
2
f
clk(spi)
MHz
Slave operation.
1
⁄
65024
f
clk(spi)
-
1
⁄
4
f
clk(spi)
MHz
Jitter Specification
CANt
jit(cc)(p-p)
CAN TXD pin
Cycle-to-cycle jitter
(peak-to-peak value).
[2]
-
0.4
1
ns
Table 31.
Dynamic characteristics
…continued
V
DD(CORE)
= V
DD(OSC_PLL)
; V
DD(IO)
= 2.7 V to 3.6 V; V
DD(A3V3)
= 3.0 V to 3.6 V; T
vj
=
−
40
°
C; all voltages are measured with
respect to ground; positive currents flow into the IC; unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit