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LPC2917_19_1
© NXP B.V. 2007. All rights reserved.
Preliminary data sheet
Rev. 1.01 — 15 November 2007
56 of 68
NXP Semiconductors
LPC2917/19
ARM9 microcontroller with CAN and LIN
Internal clock
f
clk(sys)
System clock
frequency. See
Table 23
.
10
-
80
MHz
T
clk(sys)
System clock period.
See
Table 23
.
12.5
-
100
ns
Low-Power Ring Oscillator
f
ref(RO)
RO reference
frequency.
0.36
0.4
0.42
MHz
t
startup
Start-up time.
At maximum frequency
[2]
.
-
6
100
μ
s
Oscillator
f
i(osc)
Oscillator input
frequency.
Maximum frequency is
the clock input of an
external clock source
applied to the Xin pin.
10
-
80
MHz
t
startup
Start-up time.
At maximum frequency.
[2]
[3]
-
500
-
μ
s
PLL
f
i(PLL)
PLL input frequency.
10
-
25
MHz
f
o(PLL)
PLL output frequency.
10
-
160
MHz
CCO; direct mode.
156
-
320
MHz
Analog-to-digital converter
f
i(ADC)
ADC input frequency.
[4]
4
-
4.5
MHz
f
s(max)
Maximum sampling
rate.
f
i(ADC)
= 4.5 MHz;
f
s
= f
i(ADC)
/(n+1) with
n = resolution
resolution 2 bit
-
-
1500
ksample/s
resolution 10 bit
-
-
400
ksample/s
t
conv
Conversion time.
In number of ADC clock
cycles.
3
-
11
cycles
In number of bits.
2
-
10
bits
Flash memory
t
init
Initialization time.
-
-
150
μ
s
t
wr(pg)
Page write time.
0.95
1
1.05
ms
t
er(sect)
Sector erase time.
95
100
105
ms
t
fl(BIST)
Flash word BIST time.
-
38
70
ns
t
acc(clk)
clock access time
-
-
63.4
ns
t
acc(addr)
address access time
-
-
60.3
ns
external static memory controller
t
a(R)int
Internal read-access
time.
-
-
20.5
ns
Table 31.
Dynamic characteristics
…continued
V
DD(CORE)
= V
DD(OSC_PLL)
; V
DD(IO)
= 2.7 V to 3.6 V; V
DD(A3V3)
= 3.0 V to 3.6 V; T
vj
=
−
40
°
C; all voltages are measured with
respect to ground; positive currents flow into the IC; unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit