NXP Semiconductors AN11524, Примечание к применению

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AN1
1
524
Al
l i
n
for
m
at
ion
pr
ovi
ded
in
this
do
cum
ent i
s
sub
jec
t to
leg
a
l d
is
c
la
im
er
s.
©
NXP
Se
mic
o
n
duc
tor
s
N.V
. 2015.
Al
l r
ig
h
ts
r
e
s
er
v
ed.
App
licat
ion
not
e
R
ev
. 1 —
17 Feb
ruary 2015
18 o
f 54
N
X
P Semi
conductor
s
AN1
1
524
NXQ1TXA6 Evalua
tion Boar
d
Fig 9. Half bridge driver stage of coil 2 and 3
aaa-015889
C308
68 nF
COG 100 V
C307
68 nF
COG 100 V
C312
100 nF
C311
22 μF
C310
5.6 nF
COG 100 V
C309
5.6 nF
COG 100 V
[5]
UC2_2
COIL2C COIL2T
CL2C CL2T
1
2
3
4
GL
NWP2081
R304
R303
1 Ω
1 Ω
G301 G302
C304
220 nF
SH
GH
FS
VDD
GND
SD
CLK
8
7
6
5
C303
100 nF
GNDI GNDI
GNDI GNDI GNDI GNDI
GNDI
GNDI
GNDI
C302
100 nF
T301
NX3008NBKW
R302
330 kΩ
[1, 2, 4]
PWM_HIN
+12 V
[1]
EN_HB2
GNDI GNDl
U301
L1-2
C305
n.c.
C306
n.c.
R305
22 kΩ
G
G
D
S
D
S
T302
NX2020N2
T303
NX2020N2
JP605
[1, 2, 4]
IS-
C408
68 nF
COG 100 V
C407
68 nF
COG 100 V
C412
100 nF
C411
22 μF
C410
n.c.
C409
n.c.
[5]
UC3_2
COIL3C COIL3T
CL3C CL3T
1
2
3
4
GL
NWP2081
R403
R404
1 Ω
1 Ω
G401 G402
C404
220 nF
SH
GH
FS
VDD
GND
SD
CLK
8
7
6
5
C403
100 nF
GNDI GNDI
GNDI GNDI GNDI GNDI
GNDI
GNDI
GNDI
C402
100 nF
T401
NX3008NBKW
R402
330 kΩ
[1, 2, 3]
PWM_HIN
+12 V
[1]
EN_HB3
U401
L1-3
C405
n.c.
C406
n.c.
R405
22 kΩ
G
G
D
S
D
S
T402
NX2020N2
T403
NX2020N2
[1, 2, 3]
IS-