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6ED family - 2nd generation 

 

Technical Description 

 

  

 

 

     Application Note 

10 

Rev. 1.3, 2014-03-23 

AN-EICEDRIVER-6EDL04-1 

3.2.1 

Highside input pins (HIN), Lowside input pins (LIN) 

a) 

 

b) 

 

Figure 3 

Control input pin structure 
a) negative logic 
b) positive logic 

All gate control input pins are equipped with an integrated zener clamp which is activated, when the input signal 
is  higher  than  5.25  V  according  to  Figure  2.  It  must  be  guaranteed  by  application  design,  that  these  zener 
diodes are not overstressed by excessive voltages larger than 

V

IN

 = 5.8 V. The HIGH levels of the input Schmitt-

trigger is typically 

V

IH

 = 2.1 V and the LOW level is 

V

IL

 = 0.9 V. This setting of levels provides a full compliance 

to LSTTL- and CMOS-levels, so that the 6ED family - 2nd generation is compatible to common microcontroller 
output pins. Some competitor

’s

 components do not provide the full compliance to these voltage levels, so that 

the connectivity to the microcontroller is a major concern. Electromagnetic interference may cause distorsions of 
the control signals, so that a RC-filtering of the input pins can improve the signal integrity of the system. The RC 
filter  must  not  distort  the  control  signal,  so  that  the  edges  are  still  steep.  A  good  design  is  therefore  to  use  a 
resistor of 100 

 and a capacitor of 1 nF.Please note here, that the impedance of the RC filter must follow the 

I/O-pin specifications of the microcontroller, so that the controller can drive the RC-filter sufficiently. 

A) of Figure 3 shows the input structure of the negative logic. The integrated pull-up resistor pulls the inputs to 
HIGH, if the pin is floating or driven from a high impedance source. The maximum current out of each  /HIN- or 
/LIN-pin  is 

I

LIN-

  = 

I

HIN-

  = 

200  μA,  if  applying  a  LOW  signal.  An  external  additional  pull  up  resistor  can  help  to 

obtain a reliable and precise control signal. B) of Figure 3 presents the structure of positive logic. The pull down 
resistor  has  a  value  of  typical  5  k

.  The  input  bias  currents  with 

I

LIN+

  = 

I

HIN+

 

=    660  μA  are  therefore  higher 

compared to the negative logic  

The input noise filter suppresses short pulses and prevents the driven power transistor from excessive switching 
losses due to linear operation of the switching transistors. The input noise filter time at any control input LIN or 
HIN  is  typically 

t

FILIN

  =270  ns.  This  means,  that  an  input  signal  must  stay  on  its  level  for  this  period  of  time  in 

order  that  the  state change  is  processed  correctly  according  to  Figure  4.  However,  it  is  recommended  to  stay 
above a minimal pulse duration of 1 

μs. 

3.2.2 

Enable pin (EN) 

The  signal  applied  to  pin  EN  controls  directly  the  output  sections.  All  outputs  are  set  to  LOW,  if  this  signal  is 
lower than 

V

EN-

 = 1.3V typically and operation is enabled with signal levels higher than typical 

V

EN+

 = 2.1 V. The 

internal structure of this pin is similar as b) in Figure 3 except for the switching levels of the Schmitt-Trigger and 
the  pull-down  resistor  has  a  value  of  typ.  75  k

.  The  typical  propagation  delay  time  from  EN  to  the  output 

sections is 

t

EN

 = 780 ns.  

The IC is steadily enabled, when the EN pin is pulled up to VDD (i.e. +5V / +3.3V). It is not recommended to pull 
this pin up to VCC (i.e. +15V), because this may lead to an excessive power dissipation in the input structure of 
this pin and could destroy the IC. This pin can be used as a redundant way to shut down the application in case 
that a (double) failure occurs or a first shut down mechanism fails by incident.  

 

V

Z

=10.5 V

INPUT 

NOISE

FILTER

V

IH

V

IL

I

LIN

I

HIN

LINx

HINx

V

cc

6ED-family 

2nd gneration

5 V

V

Z

=10.5 V

INPUT 

NOISE

FILTER

V

IH

V

IL

I

LIN

I

HIN

LINx

HINx

 

V

cc

6ED-family 

2nd gneration

Содержание EiceDRIVER 6ED Series

Страница 1: ...Industrial Power Control EiceDRIVER High voltage gate drive IC Application Note AN EICEDRIVER 6EDL04 1 Rev 1 3 2014 03 23 6ED family 2nd generation Technical description ...

Страница 2: ...SPECT TO ANY AND ALL INFORMATION GIVEN IN THIS APPLICATION NOTE Information For further information on technology delivery terms and conditions and prices please contact the nearest Infineon Technologies Office www infineon com Warnings Due to technical requirements components may contain dangerous substances For information on the types in question please contact the nearest Infineon Technologies...

Страница 3: ...FirstGPS of Trimble Navigation Ltd EMV of EMVCo LLC Visa Holdings Inc EPCOS of Epcos AG FLEXGO of Microsoft Corporation FlexRay is licensed by FlexRay Consortium HYPERTERMINAL of Hilgraeve Incorporated IEC of Commission Electrotechnique Internationale IrDA of Infrared Data Association Corporation ISO of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION MATLAB of MathWorks Inc MAXIM of Maxim Integrate...

Страница 4: ...2 Enable pin EN 10 3 3 Control output section FAULT 11 3 4 IC supply section 12 3 5 Gate drive section 13 3 5 1 Low side gate drive 13 3 5 2 High side section 13 3 5 3 Negative Transients at High Side Reference pin VSx 14 3 6 Bootstrapping 14 3 7 Protection 16 3 7 1 Overcurrent protection ITRIP 16 3 7 2 Failure reset RCin 16 3 7 3 Deadtime Shoot Through Prevention 17 3 7 4 Undervoltage Lockout UVL...

Страница 5: ...ogic 11 Figure 5 Schematic of the structure of the FAULT pin 11 Figure 6 Timing diagramm for ITRIP to FAULT propagation delay 12 Figure 7 Areas of operation 12 Figure 8 Structure of the lowside gate drive section 13 Figure 9 Structure of the lowside gate drive section 14 Figure 10 Bootstrap circuit for one halfbridge a 6ED003L06 F2 and 6ED003L02 F2 b others 14 Figure 11 Size of the bootstrap capac...

Страница 6: ...6ED family 2nd generation Technical Description Application Note 6 Rev 1 3 2014 03 23 AN EICEDRIVER 6EDL04 1 List of Tables Table 1 Members of 6ED family 2nd generation 7 Table 2 Used parameters 21 ...

Страница 7: ...rol input HIN1 2 3 and LIN1 2 3 UVLO threshold Bootstrap diode Package Optimal for 6EDL04I06NT negative logic 12 1V 10 2V Yes DSO28 IGBT 6EDL04I06PT positive logic 12 1V 10 2V Yes DSO28 IGBT 6EDL04N06PT 6EDL04N02PR positive logic 8 9V 8 0V Yes DSO28 TSSOP28 MOSFET 6ED003L06 F2 6ED003L02 F2 negative logic 12 1V 10 2V No DSO28 TSSOP28 IGBT replacement of 1 st generation It is obvious that the 6ED fa...

Страница 8: ...LOCOS process Thus there is no need for CMOS wells for preventing the latch up effect and reducing the chip size The small size of PN junctions inside the thin silicon film leads to higher switching speed lower leakage currents and consequently higher temperature stability In order to obtain a proper body contact for the thin SOI MOS transistor the channel doping is extended and connected to a com...

Страница 9: ...s that the 6ED family 2 nd generation has another margin of 5 7 V with respect to COM The relevant maximum rating of 6ED family 2 nd generation in the datasheet on p 14 are The 6ED family 2 nd generation gives a maximum rating for VCC in respect to VSS 20 V The 6ED family 2 nd generation gives a maximum rating for COM in respect to VSS 5 7 V The 6ED family 2 nd generation give a maximum rating for...

Страница 10: ...N 200 μA if applying a LOW signal An external additional pull up resistor can help to obtain a reliable and precise control signal B of Figure 3 presents the structure of positive logic The pull down resistor has a value of typical 5 k The input bias currents with ILIN IHIN 660 μA are therefore higher compared to the negative logic The input noise filter suppresses short pulses and prevents the dr...

Страница 11: ... for this open drain pin The voltage at this pin is internally clamped to VCC as one can see in the internal structure according to Figure 5 The internal pull down FET has a typical resistance of RON FLT 61 The delay time from the triggering event to the change of status at the FAULT pin is tFLT 450 ns typically according to the timing diagram shown in Figure 6 FAULT 1 from uv detection VCC RON FL...

Страница 12: ...hside supply before the IC gets into an operational state The levels of these parameters are either 11 7 V or 9 V depending on the individual type of the 6ED family It is recommended to have a margin of at least 1 V in respect to VCCUV and VBSUV in order to avoid unintended shut down caused by noise The IC shuts down the individual gate sections when the related supply voltage is below VCCUV or VB...

Страница 13: ...upply voltage VCC of the IC via the reverse diodes of the FET This prevents the output pins from excessive pulse voltages which may be coupled into the gate track There is also an internal zener clamp of the push pull circuit between COM and VCC 3 5 2 High side section The high side gate drive section is shown in Figure 9 The control signal passes the high voltage level shift section and is stored...

Страница 14: ...n also increase the pulse current through the external or internal bootstrap diode and may lead to damage The design target is therefore to avoid such negative transient voltage at all or to keep at least the absolute maximum ratings 3 6 Bootstrapping Bootstrapping is a common method of pumping charges from a low potential to a higher one With this technique a supply voltage for the floating highs...

Страница 15: ...tor is mainly discharged by two effects The highside quiescent current and the gate charge of the transistor to be turned on The calculation of the bootstrap capacitor results in 2 with iQBS being the quiescent current of the highside section tP the switching period QG the total gate charge and vBS the voltage drop at the bootstrap capacitor within a switching period An additional margin of 20 is ...

Страница 16: ...he comparator is low again This corresponds to a voltage level at the comparator of VIT TH VIT HYS 445 mV 70 mV 375 mV where VIT HYS 70 mV is the hysteresis of the ITRIP comparator RCIN IRCIN VZ 10 5V ITRIP SET DOMINANT LATCH S R Q INPUT NOISE FILTER VIT TH 0 445V Comp COM VSS VDD2 8V NMOS RON RCIN current source VSS VCC VCC to FAULT 6ED family 2nd generation RRCin CRCin VRCIN TH 5 2V VRCIN HYS 2 ...

Страница 17: ...e drive sections The levels are VCCUV for the control side and VBSUV for the high side sections Please refer to the correct absolute level in respect to the individual type of the 6ED family Please refer to section 3 4 for further information In case of an UVLO shut down of an output section it is necessary to reach the start up levels of VCCUV and VBSUV again as descibed in section 3 4 The indepe...

Страница 18: ...and the ext gate resistor Different cases for turn on and turn off must be considered because many designs use different resistors for turn on and turn off This leads to a specific distribution of losses in respect to the external gate resistor RGxx ext and the internal resistance of the output section 7 8 Both portions Pd2on and Pd2on together are the output section losses 3 The input sections ge...

Страница 19: ...e IC Figure 14 shows these inductances and track loops VDC DBS 3 x 600V 1A VCC Low inductive shunt Small and short loops LOx HOx VSx COM VSS VBx RLim RSh CBS CDC Figure 14 Parasitic inductances in the layout First of all the gate tracks which connect the pins HOx and LOx with the according gate terminal of the power transistor and the tracks connecting the emitter source terminals of the power tra...

Страница 20: ...nd the pin VS must also be small Otherwise there may be inductive voltage drops during the gate charging process of turn on which may result in spontaneous undervoltage lockout events at the high side section Finally the inductances of the DC link tracks can be partially cancelled if one places a low impedance film capacitor between the positive and negative rail closely to the transistor terminal...

Страница 21: ... A area p P power b B flux density r R resistance C capacitance t T time time intervals d D duty cycle v V voltage f frequency w W energy i I current efficiency l L inductance C capacitor L inductor D diode R resistor IC integrated circuit TR transformer AC alternating current value i running variable avg average in input value DC direct current value max maximum value BE basis emitter min minimum...

Страница 22: ...e KOA corporation Japan 2007 5 KOA corporation Flat chip thick film resistors general purpose RK73B Revision 10 11 2006 data sheet KOA corporation Japan 2006 6 IEC 60335 1 Household and similar electrical appliances Safety Part 1 General requirements Ed 4 2001 05 International Electrotechnical Commission Geneva Switzerland 2001 7 IEC 664 1 Insulation coordination for equipment within low voltage s...

Страница 23: ...w w w i n f i n e o n c o m Published by Infineon Technologies AG AN EICEDRIVER 1 ...

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