
A C R E A D I N G C H A R A C T E R I S T I C S
(V
SS
=0 V, T
A
= 25
°
C
±
5
°
C)
S y m b o l I t e m M i n T y p M a x Unit T e s t c o n d i t i o n
t
A S
Address setup time 2 us
t
O E
Data output delay time 200 ns
t
D H
Data hold time 0 ns
N O T E S :
1. VD D must be applied simultaneously or before VPP and removed simultaneously or after VPP.
A C P R O G R A M M I N G C H A R A C T E R I S T I C S
(V
SS
=0 V, T
A
= 25
°
C
±
5
°
C; See DC Characteristics Table for V
D D
and V
PP
voltages.)
S y m b o l I t e m M i n T y p M a x U n i t
C o n d i t i o n *
( N o t e 1 )
t
A S
Address set-up time 2 us
t
O E S
O E set-up time 2 us
t
D S
Data setup time 2 us
t
A H
Address hold time 0 us
t
D H
Data hold time 1 us
t
D F P
Output disable delay time 0 us
t
V P S
V
P P
setup time 2 us
t
V D S
V
D D
setup time 2 us
t
P W
Program pulse width 0.95 1.0 1.05 ms Intelligent
t
O P W
C E pulse width when over
programming
2.85 78.75 ms (Note 2)
t
O E
Data output delay time 200 ns
* A C C O N D I T I O N S O F T E S T
Input Rise and Fall Times (10% to 90%) . . . . 20 ns
Input Pulse Levels . . . . . . . . . . . . . . . 0.45V to 4.55V
Input Timing Reference Level . . . . . . . . . 1.0V to 4.0V
Output Timing Reference Level . . . . . . . . 1.0V to 4.0V
N O T E S :
1. VD D must be applied simultaneously or before VPP and removed simultaneously or after VPP.
2. The length of the overprogram pulse may vary from 2.85 msec to 78.75 msec as a function of the iteration counter value X
Refer to page 13.
HYUNDAI MicroElectronics GMS81516AT EPROM PROGRAMMING
12