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Rev. 2.50
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HT66F20/HT66F30/HT66F40/HT66F50/HT66F60
HT66FU30/HT66FU40/HT66FU50/HT66FU60
A/D Flash MCU with EEPROM
HT66F20/HT66F30/HT66F40/HT66F50/HT66F60
HT66FU30/HT66FU40/HT66FU50/HT66FU60
A/D Flash MCU with EEPROM
Flash Program Memory
The Program Memory is the location where the user code or program is stored. For this device
series the Program Memory is Flash type, which means it can be programmed and re-programmed
a large number of times, allowing the user the convenience of code modification on the same
device. By using the appropriate programming tools, these Flash devices offer users the flexibility to
conveniently debug and develop their applications while also offering a means of field programming
and updating.
Structure
The Program Memory has a capacity of 1K×14 bits to 12K×16 bits. The Program Memory is
addressed by the Program Counter and also contains data, table information and interrupt entries.
Table data, which can be setup in any location within the Program Memory, is addressed by a
separate table pointer register.
Device
Capacity
Banks
HT66F20
�K�4
0
HT66F30
2K�4
0
HT66F40
4K�5
0
HT66F50
8K�6
0
HT66F60
�2K�6
0� �
The HT66F60 has its Program Memory divided into two Banks, Bank 0 and Bank 1. The required
Bank is selected using Bit 5 of the BP Register.
I n t e r r u p t
V e c t o r
0 0 0 4 H
0 3 F F H
1 4 b i t s
0 0 2 C H
I n t e r r u p t
V e c t o r
1 4 b i t s
0 7 F F H
I n t e r r u p t
V e c t o r
1 5 b i t s
I n t e r r u p t
V e c t o r
1 6 b i t s
I n t e r r u p t
V e c t o r
R e s e t
0 0 0 0 H
R e s e t
R e s e t
R e s e t
R e s e t
0 0 3 C H
B a n k 0
1 6 b i t s
0 F F F H
1 F F F H
1 F F F H
2 0 0 0 H
2 F F F H
B a n k 1
Program Memory Structure