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WITE32 Release Notes Version 3.11
There are two frames in the dialog box – the
Erase Parameters
frame and the
Band Erase Parameters
frame.
The
Erase Parameters
frame allows you to define the erase configuration.
The
Iterations
text box
Defines the number of repetitions for each erase operation at each
offset
The
Mode
option buttons
Defines the erase modes:
•
Positive DC
– the DC erase operation using the positive write
current for one revolution.
•
Negative DC
– the DC erase operation using the negative
write current for one revolution.
•
Positive DC / Negative DC
– the DC erase operation using
the positive write current for the first revolution, followed by
the DC erase operation using the negative write current for
the second revolution.
•
Negative DC / Positive DC
– the DC erase operation using
the negative write current for the first revolution, followed by
the DC erase operation using the positive write current for
the second revolution.
•
AC
– the AC erase operation for one revolution with the
frequency defined in the
Frequency
text box.
The
Frequency
text box
Defines the frequency for the AC erase operation, in MFlux/s.
The
Write Current
text boxes Define the write current values (in mA) used in the erase operation.
You can configure individual write current for the first and the second
revolution.
The
Use System
check boxes
If the check box is checked, the
Write Current
text box value for the
corresponding revolution is ignored. The current system write current
is used instead.
The
Band Erase Parameters
frame allows you to define the area around the current track for the band erase operation.
The
From
text box
Defines the starting offset position for the band erase operation,
in
µ
Inch.
The
To
text box
Defines the ending offset position for the band erase operation,
in
µ
Inch.
The
Step
text box
Defines the offset step size for each erase operation, in
µ
Inch.
The
Interleave Band Erase
check box
If it is checked, the
Mode
option is ignored. The band erase operation
is done in the following way:
1. Erase using the positive write current at the first offset
position.
2. Erase using the negative write current at the second
offset position.
3. Erase using the positive write current at the third offset
position, etc.
Note:
The band erase area is specified in terms of the head writer offset (in
µ
Inch) in respect to the center of the track.
All
System Erase
and
System Band Erase
parameters are zone/setup dependent, you can double-click on the
parameter label to specify the value of the parameter for each zone and setup.
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