MT5F33743
© Fuji Electric Co., Ltd. All rights reserved.
The guaranteed value of
V
GE
for the IGBT module is generally up to
±
20 V (Check the specifications
for the exact guaranteed value). If a voltage that exceeds the guaranteed value (
V
GES
) is applied
between the gate and emitter of the IGBT, the IGBT gate is susceptible to breakage. Therefore, make
sure that the voltage applied between the gate and emitter does not exceed the guaranteed value. In
particular, the control terminal for the IGBT gate and temperature sensing diode is extremely sensitive
to static electricity. Therefore, make sure to observe the following cautions when handling the product.
1) When handling the module after unpacking, first make sure to discharge any static electricity that
exists on the human body or clothing with a high-
resistance (about 1 MΩ) ground, and then perform
the work on a grounded conductive mat.
2) For the IGBT module, since no electrostatic measures have been taken for the terminal after
unpacking, do not directly touch terminal components (especially the control terminal), but handle
the module using the package body.
3) When performing soldering work on the IGBT terminal, make sure to ground the tip of the soldering
iron with an adequately low resistance to ensure that static electricity is not applied to the IGBT
through soldering iron or solder bath leakage.
Furthermore, the IGBT is susceptible to breakdown if voltage is applied between the collector and
emitter while the gate-emitter are in the open state.
The reason for this is shown in Fig. 5-11 where a change in collector potential causes the gate
potential to rise due to the flow of current (i). As a result, the IGBT turns on, and collector current
begins to flow, which in turn, could cause IGBT breakdown due to heat generation.
Furthermore, when the product is installed in a piece of equipment, the IGBT is susceptible to
breakdown due to the above reasons when a voltage is applied to the main circuit while the gate circuit
is broken or not operating normally (gate in the open state). In order to prevent this type of breakdown,
it is recommended that a resistor (
R
GE
) of about 10 kΩ be installed between the gate and emitter.
6. Electrostatic Discharge Countermeasures and Gate Protection
5-9
Fig. 5-11 Gate charging from electric potential of collector
C(Collector)
E(Emitter)
G(Gate)
R
GE
i
I
C
